Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 3, Problem 3.29P

The transistor in the circuit in Figure P3.29 has parameters V T P = 0.8 V and K p = 0.20 mA/V 2 . Sketch the load line and plot the Q−point for (a) V D D = 3.5 V, R D = 1.2 k Ω and (b) V D D = 5 V, R D = 4 k Ω . What is the operating bias region for each condition?

Chapter 3, Problem 3.29P, The transistor in the circuit in Figure P3.29 has parameters VTP=0.8V and Kp=0.20mA/V2 . Sketch the
Figure P3.29

(a)

Expert Solution
Check Mark
To determine

To sketch: A load line and labelQ -point.

To find: The region of operation of transistor.

Answer to Problem 3.29P

A load line along with Q -point is shown in Figure 1.

The transistor operates in triode region.

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 3, Problem 3.29P , additional homework tip  1

  VTP=0.8V,Kp=0.2mAV2VDD=3.5V,RD=1.2

Calculation:

The value of VSG is:

  VSG=VSVGVSG=VDD0VSG=3.5V

The value of VSD(sat) is:

  VSD(sat)=VGS|VTP|VSD(sat)=3.50.8VSD(sat)=2.7V

Applying Kirchhoff’s voltage in drain-source terminal:

  VSD=VDDIDRDVSD=3.51200ID...(1)

Assuming the Mosfet operates in triode region:

The expression of drain current in triode region:

  ID=Kn[2( V SG| V TP |)VSDVSD2]ID=0.2×103[2(3.50.8)(3.51200 I D)( 3.51200 I D )2]ID=0.2×103[5.4(3.51200 I D)( 3.51200 I D )2]ID=0.2×103[(3.51200 I D)(5.43.5+1200 I D)]ID=0.2×103[(3.51200 I D)(1.9+1200 I D)]ID=0.2×103[6.65+4200ID2280ID1.44×106ID2]ID=1.33×103+0.384ID288ID2288ID2+0.616ID1.33×103=0ID=1.33mA

From equation (1):

  VSD=3.51200IDVSD=3.51200(1.33× 10 3)VSD=1.9V

From above calculations:

  VSD<VSD(sat)

Hence, the assumption is correct and the transistor is biased in triode region.

The value of Q -point is:

  (VSDQ,IDQ)=(1.9V, 1.33mA)

The diagram of load line is sketched as follows:

From equation (1):

  VSD=3.51200IDID=(1 1200)VSD+( 3.5 1200)

It is equation of straight line with negative slope.

  y=mx+c

At ID=0 ,

  VSD=3.5V

At VSD=0 ,

  ID=3.51200ID=2.92mA

  Microelectronics: Circuit Analysis and Design, Chapter 3, Problem 3.29P , additional homework tip  2

Figure 1

(b)

Expert Solution
Check Mark
To determine

To sketch: A load line and labelQ -point.

To find: The region of operation of transistor.

Answer to Problem 3.29P

A load line along with Q -point is shown in Figure 2.

The transistor operates in triode region.

Explanation of Solution

Given Information:

The given circuit is shown below.

  Microelectronics: Circuit Analysis and Design, Chapter 3, Problem 3.29P , additional homework tip  3

  VTP=0.8V,Kp=0.2mAV2VDD=5V,RD=4

Calculation:

The value of VSG is:

  VSG=VSVGVSG=VDD0VSG=5V

The value of VSD(sat) is:

  VSD(sat)=VGS|VTP|VSD(sat)=50.8VSD(sat)=4.2V

Applying Kirchhoff’s voltage in drain-source terminal:

  VSD=VDDIDRDVSD=54000ID...(1)

Assuming the Mosfet operates in triode region:

The expression of drain current in triode region:

  ID=Kn[2( V SG| V TP |)VSDVSD2]ID=0.2×103[2(50.8)(54000 I D)( 54000 I D )2]ID=0.2×103[8.4(54000 I D)( 54000 I D )2]ID=0.2×103[(54000 I D)(8.45+4000 I D)]ID=0.2×103[(54000 I D)(3.4+4000 I D)]ID=0.2×103[17+20,000ID13,600ID16×106ID2]ID=3.4×103+1.28ID3200ID23200ID20.28ID3.4×103=0ID=1.075mA

From equation (1):

  VSD=54000IDVSD=54000(1.075× 10 3)VSD=0.7V

From above calculations:

  VSD<VSD(sat)

Hence, the assumption is correct and the transistor is biased in triode region.

The value of Q -point is:

  (VSDQ,IDQ)=(0.7V, 1.075mA)

The diagram of load line is sketched as follows:

From equation (1):

  VSD=54000IDID=(1 4000)VSD+(5 4000)

It is equation of straight line with negative slope.

  y=mx+c

At ID=0 ,

  VSD=5V

At VSD=0 ,

  ID=54000ID=1.25mA

  Microelectronics: Circuit Analysis and Design, Chapter 3, Problem 3.29P , additional homework tip  4

Figure 2

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Chapter 3 Solutions

Microelectronics: Circuit Analysis and Design

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The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. 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The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. 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