Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 3, Problem 3.65P
To determine
The design parameters of the circuit. Also, the value of
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According to the circuit given in the figure, VT=25mV, |VBE|=0.7V, R1=1487.51Kohm, R2= 7.42Kohm, R3= 6.71Kohm , R4= 2.87Kohm, VCC= 13.00V, VEE= 1.00V , VA=28.21V , Beta= 120.00 , Rs= 36.18ohm, Ry= 15.61Kohm Calculate the IC current, Ri, R0 and voltage gain(V0/V1) according to the source by performing a complete analysis. When performing your operations, 2 steps will be taken after the point. choose the closest one from the stylish ones according to the +/-10% margin of error. There is only 1 correct answer to the question.
Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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Similar questions
- In the circuit given in the figure, VT = 25mV, | VBE | = 0.7V, R1 = 1519.62Kohm, R2 = 48.01Kohm, R3 = 3.22Kohm, R4 = 1.38Kohm, VCC = 13.00V, VEE = -6.00V, VA = 19.82V, Since Beta = 163.00, Rs = 23.65 ohm, Ry = 18.08Kohm, by Source calculate IC current, Ri, R0 and voltage gain (V0 / V1) with full analysis.arrow_forwardIn the circuit given in the figure VT = 25mV, | VBE | = 0.7V, R1 = 712.91Kohm, R2 = 43.27Kohm, R3 = 2.29Kohm, R4 = 0.98Kohm, VCC = 10.00V, VEE = -4.00V, VA = 10.06V, Beta = 137.00, Rs = 38.43ohm, Ry Calculate the IC current according to = 16.55Kohm, Ri, R0 and the voltage gain (V0 / V1) according to the Source by full analysis When making your transactions, 2 steps will be taken after the point. Select the closest option according to +/- 10% margin of error. There is only one correct answer to the question.arrow_forwardQ3:- Design the circuit shown in Fig.(3) , to give a voltage gain = 20 Assume Veso =3V , Vbso =4V, Ing =5 mA and K=2 mA / V? Rin =1 MQ Vop =24Varrow_forward
- Show that the drain current IDQ is approximately equal to 3.65 mA (graphically or otherwise). Then calculate VDSQ.arrow_forwardKnow how to design simple voltage-divider and currentdivider circuits 1. Find the value of R that will cause 4 A of current to flow through the80 Ω resistor in the circuit shown.2. How much power will the resistor R from part (a) need to dissipate?3. How much power will the current source generate for the value of Rfrom part (a)?arrow_forwardIn the circuit given in the figure, VT = 25mV, | VBE | = 0.7V, R1 = 1402.66Kohm, R2 = 32.67Kohm, R3 = 2.91Kohm, R4 = 1.25Kohm, VCC = 10.00V, VEE = -5.00V, VA = 25.00V, Since Beta = 208.00, Rs = 28.63ohm, Ry = 13.62Kohm, calculate the IC current, Ri, R0 and the voltage gain according to the Source (V0 / V1) by full analysis.arrow_forward
- 1.What factor(s) can contribute to differences between ideal theoretical values in a circuit and values measured in actual practice? A) Measurement inaccuracy B)Component tolerances C)Both (a) and (b). D)Neither (a) nor (b). 2.What maximum range of values could resistor R3 have and still be within tolerance assuming R3 is a 10% resistor? A) 3296.7 – 3303.3 Ω B) 2970 – 3630 Ω C) 3267 – 3333 Ω D) 2967 – 3633 Ω 3.A voltage of one volt applied across a resistance of one ohm produces a current of one ampere. What happens to the current if the voltage is doubled and the resistance is halve? A)It doubles. B)It increases four times. C)It increases three times. D)It remains the same. In Question 3, what is the current in amperes if the voltage is halved and the resistance is doubled? A) 1 ampere B) 33 ampere C) 5 ampere D) 25 amperearrow_forwardIn the circuit given in the figure, Rk = 1.48Kohm, R1 = 7964.99Kohm, R2 = 7035.01Kohm, R3 = 2.46Kohm, R4 = 0.82Kohm, R5 = 24.08ohm, Ry = 98.63Kohm, VCC = 15.00V, VTN = 2.45V, Kn = Since 3.28(mA/V^2), C1= 6.30uF, C2=14.98uF, C3=10.96uF, calculate the lower cutoff frequency of the circuit in Hz.arrow_forwardIn the circuit given in the figure, Rk = 1.48Kohm, R1 = 7964.99Kohm, R2 = 7035.01Kohm, R3 = 2.46Kohm, R4 = 0.82Kohm, R5 = 24.08ohm, Ry = 98.63Kohm, VCC = 15.00V, VTN = 2.45V, Kn = Since 3.28(mA/V^2), C1= 6.30uF, C2=14.98uF, C3=10.96uF, calculate the lower cutoff frequency of the circuit in Hz. When making your transactions, 2 digits will be taken after the dot.arrow_forward
- Calculate IR, determine the voltage Vce2 and the dynamic resistance re3 of Q3. Assume that VT = 25mV and Vbe = 0.7Varrow_forwardNeed help with this Question The D-MOSFET circuit shown in Figure Q1(b) has IDSS = 3 mA and VGS(off) =−8 V. Given the following:R1 = 50 kΩR2 = 150 kΩRD = 1 kΩRS = 2 kΩVDD = +10 VVSS = −10 VDetermine VGS, ID and VDS.arrow_forwardSolve step by steo a) and b) please a) Determine Vs and Rs from a voltage source equivalent to a current source with Is = 500 mA and Rs = 600 Ω b) Determine Is and Rs of a current source equivalent to a voltage source with Vs = 13V and Rs = 10Ωarrow_forward
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