Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Question
Chapter 17, Problem 13RQ
To determine
To sketch: A low power Schottky TTL NAND circuit.
To explain: The primary difference between this circuit and the regular DTL circuit.
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Chapter 17 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 17 - Consider the differential amplifier circuit in...Ch. 17 - Prob. 17.2EPCh. 17 - The reference circuit in Figure 17.5 is to be...Ch. 17 - Assume the maximum currents in Q3 and Q4 of the...Ch. 17 - Prob. 17.5EPCh. 17 - Prob. 17.6EPCh. 17 - Prob. 17.1TYUCh. 17 - Prob. 17.2TYUCh. 17 - Prob. 17.7EPCh. 17 - Prob. 17.3TYU
Ch. 17 - The ECL circuit in Figure 17.19 is an example of...Ch. 17 - Consider the basic DTL circuit in Figure 17.20...Ch. 17 - The parameters of the TIL NAND circuit in Figure...Ch. 17 - Prob. 17.10EPCh. 17 - Prob. 17.5TYUCh. 17 - Prob. 17.6TYUCh. 17 - Prob. 17.7TYUCh. 17 - Prob. 17.8TYUCh. 17 - Prob. 17.11EPCh. 17 - Prob. 17.12EPCh. 17 - Prob. 17.9TYUCh. 17 - Prob. 17.10TYUCh. 17 - Prob. 17.11TYUCh. 17 - Prob. 1RQCh. 17 - Why must emitterfollower output stages be added to...Ch. 17 - Sketch a modified ECL circuit in which a Schottky...Ch. 17 - Explain the concept of series gating for ECL...Ch. 17 - Sketch a diodetransistor NAND circuit and explain...Ch. 17 - Explain the operation and purpose of the input...Ch. 17 - Sketch a basic TTL NAND circuit and explain its...Ch. 17 - Prob. 8RQCh. 17 - Prob. 9RQCh. 17 - Prob. 10RQCh. 17 - Explain the operation of a Schottky clamped...Ch. 17 - Prob. 12RQCh. 17 - Prob. 13RQCh. 17 - Sketch a basic BiCMOS inverter and explain its...Ch. 17 - For the differential amplifier circuit ¡n Figure...Ch. 17 - Prob. 17.2PCh. 17 - Prob. 17.3PCh. 17 - Prob. 17.4PCh. 17 - Prob. 17.5PCh. 17 - Prob. 17.6PCh. 17 - Prob. 17.7PCh. 17 - Prob. 17.8PCh. 17 - Prob. 17.9PCh. 17 - Prob. 17.10PCh. 17 - Prob. 17.11PCh. 17 - Prob. 17.12PCh. 17 - Prob. 17.13PCh. 17 - Prob. 17.14PCh. 17 - Prob. 17.15PCh. 17 - Prob. 17.16PCh. 17 - Prob. 17.17PCh. 17 - Prob. 17.18PCh. 17 - Consider the DTL circuit shown in Figure P17.19....Ch. 17 - Prob. 17.20PCh. 17 - Prob. 17.21PCh. 17 - Prob. 17.22PCh. 17 - Prob. 17.23PCh. 17 - Prob. 17.24PCh. 17 - Prob. 17.25PCh. 17 - Prob. 17.26PCh. 17 - Prob. 17.27PCh. 17 - Prob. 17.28PCh. 17 - Prob. 17.29PCh. 17 - Prob. 17.30PCh. 17 - Prob. 17.31PCh. 17 - Prob. 17.32PCh. 17 - Prob. 17.33PCh. 17 - For the transistors in the TTL circuit in Figure...Ch. 17 - Prob. 17.35PCh. 17 - Prob. 17.36PCh. 17 - Prob. 17.37PCh. 17 - Prob. 17.38PCh. 17 - Prob. 17.39PCh. 17 - Prob. 17.40PCh. 17 - Prob. 17.41PCh. 17 - Prob. 17.42PCh. 17 - Prob. 17.43PCh. 17 - Prob. 17.44PCh. 17 - Design a clocked D flipflop, using a modified ECL...Ch. 17 - Design a lowpower Schottky TTL exclusiveOR logic...Ch. 17 - Design a TTL RS flipflop.
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Similar questions
- Given an ideal 6 bit ADC with a reference voltage of 640mV, what is a VLSB of this ADC? What is the rms value of its quantization errors ?arrow_forwardDraw the circuit schematic of a three-input NANDgate. Suppose the NMOS transistors are chosen tohave (W/L)N =2/1. What are the correspondingW/L ratios of the PMOS devices, if the gate is tohave symmetrical delay characteristics?arrow_forwardDraw the schematic of a three-input NAND gate. What are the W/L ratios for thetransistors based?arrow_forward
- Simplify the following function and implement with NAND gates F =Pm(0, 1, 2, 3, 7, 9, 11, 13, 15)arrow_forwardDraw an equivalent NMOS and PMOS combination for the NAND gate. Assume VDD at 5V.arrow_forwardWhat are the worst-case rise and fall times andaverage propagation delays of the CMOS gate inFig. (b) for a load capacitance of 1.25 pF?arrow_forward
- Realize the following function as a minimum two-level NAND-gate circuit and as a minimum two-level NOR-gate circuit. ?(?,?,?,?)=∏?(1,3,10,11,13,14,15)∙∏?(4,6)arrow_forwardEstimate the gate capacitance of PMOS transistor (? = 0.36?, ? =0.18?). Gate oxide thickness is 40Å . Relative permittivity of silicon dioxide is 3.9. Vacuumpermittivity ?0 = 8.854 ? 10−12F·?−1. Answer in fF , round off to 4 decimal places.arrow_forwardQuestion No. 4: (handwritten) a) Use Dynamic CMOS level design technique to prepare a 4 input NAND Gate b). by Use Pseudo-NMOS level design technique to prepare a 4 input NAND Gatearrow_forward
- What are the rise and fall times and average propagation delay of the NMOS gate ifC = 0.5 pF and VDD = 2.5 V? Use the estimatesin . (b) What are the rise and fall timesand average propagation delays of the NMOS gate if C = 0.3 pF and VDD = 3.3 V?arrow_forwardGiven a standard size 2-input NAND gate followed by two inverters and a load of 100C. What is the optimum delay of the circuit? (numerical answer)arrow_forwardDesign an NMOS depletion load inverter (VDD =3.3 V, VL = 0.20 V, VTNS = 0.75 V, VTNL = −2 V,γ = 0) to have an average propagation delay of 1 nswith a capacitive load of 0.2 pF. What is the averagestatic power dissipation of this gate?arrow_forward
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