Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Question
Chapter 8, Problem 8.1P
(a)
To determine
To sketch: The safe operating area for the given transistor specifications using voltage and current linear scale.
(b)
To determine
The value of
To sketch: The load line that will produce maximum power in the transistor.
(c)
To determine
The maximum possible drain current for given voltages.
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Refer to the differential amplifier circuit shown below .
Determine the quiescent DC voltage at the collector terminal of each transistor assuming VBE of two transistor are negligible.
What will be the quiescent DC values if VBE is taken to be 0.7 V.
By doing circuit analysis (theoretical analysis) and using the resistances and voltage nominal values, determine the theoretical values for Vrl, Irl, Vth, and Rth.
b. Design a feasible class A silicon BJT Power Amplifier that provides a high voltagegain using 15 volts supply and employs a concept to increase its loaded efficiency to50% so that little power loss is provided at the collector terminal.Given by manufacturer for safe operation, the amplifying component has a DCcurrent gain of 200 and a collector current limit of 4mA. The output stage of theAmplifier drives a headphone with 32-ohms load impedance applicable forsmartphones.
Chapter 8 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 8 - Prob. 8.1EPCh. 8 - Prob. 8.2EPCh. 8 - Prob. 8.3EPCh. 8 - Prob. 8.1TYUCh. 8 - Prob. 8.2TYUCh. 8 - Prob. 8.3TYUCh. 8 - Prob. 8.4EPCh. 8 - Prob. 8.5EPCh. 8 - Prob. 8.7EPCh. 8 - Prob. 8.4TYU
Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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- (a) A current source with Rout = βoro is used to bias a standard bipolar differential amplifier. What is an expression for the CMRR of this amplifier for single-ended outputs?arrow_forwardDescribe cmrr with the figure.arrow_forwardSubject:Electronics Engineering How MOSFET has been constructed? Explain the principle of operation of MOSFET at different values of VGS and VDSarrow_forward
- 2- Draw a transistor amplifier circuit ( BJT ) Bipolar Junction of type ( NPN ) then write the mathematical relation of Circuit voltage gain factor and what is the factors that depend on and how can we increase the gain factor .arrow_forwardAn amplifier circuit is needed with an input resistance of 50Ω. Should a BJT or MOSFET be chosen for this circuit? Discuss.arrow_forwardThe purpose of biasing is to: Select a. minimize the BJT power dissipation b. minimze the BJT termperature stability C. specify the values of I, C(sat) and V CE(cutoff) d. establish a proper stable dc operating pointarrow_forward
- Design a feasible class A silicon BJT Power Amplifier that provides a high voltagegain using 15 volts supply and employs a concept to increase its loaded efficiency to50% so that little power loss is provided at the collector terminal.Given by manufacturer for safe operation, the amplifying component has a DCcurrent gain of 200 and a collector current limit of 4mA. The output stage of theAmplifier drives a headphone with 32-ohms load impedance applicable forsmartphones.arrow_forwardcircuit diagram with a load ,for the Power MOSFETarrow_forwardA base voltage of four volts is applied to an NPN bipolar junction transistor. A twenty kilo ohm resistor is linked to the base, while a hundred kilo ohm resistor is connected to the collector. The Collector is powered by a six volt supply voltage. Assume the transistor is in active mode, with a fifty common Emitter current gain(β).(i) Utilize the dc equivalent model of the transistor to draw the circuit design.(ii) Calculate the Collector current (IC) and the Base current (IB) .ii) Locate/determine the result (VCE).arrow_forward
- Draw the circuit symbol for a NPN BJT. Label the terminals and currents. Chose the reference directions that agree with the true current directions for operation in the amplifier region.arrow_forwardFor the Enhancement-type MOSFET in following figure, 1.Determine IDQ and VGSQarrow_forwardName three passive components that are relevant to active circuit design and explain why they are relevant.arrow_forward
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