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The transistors in the output stage in Figure 8.34 are all matched. Their parameters are
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Microelectronics: Circuit Analysis and Design
- A 5-V, 10-MHz oscillator have a rise/falltime of 10ns and a 50% duty cycle is applied to a gate. Determine the value of the capacitance such that the 5th harmonic is reduced by 20 dB in the gate voltage Vg(t).arrow_forwardDesign a Single-Stage Common Emitter Class A Amplifier Specifications:Voltage Divider Bias Circuit Supply: Any value from 10Vdc to 24VdcLoad: 1kΩVoltage Gain: Any value from 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50mVp-pTransistor: Si, β = 75 • Base-Collector capacitance = 8pF • Base-Emitter Capacitance = 25pF a) compute for the biasing resistances.b) determine the dc transistor terminal voltages and transistor currents.arrow_forwardFor the circuit given below, let VBEQ=0.7 V, then the Q-point(VCEQ,ICEQ) equals:arrow_forward
- In the circuit in the figure, VGSQ = 6.8 V, IDQ = 2.4 mA, VGS(Th) = 3.3 V, k = 0.4x10-3 A/V2, RD = 5.6 kΩ, RF = 2.2 MΩ and rd = 25 kΩ. Accordingly, when a RL = 0.1 kΩ load is connected to the output of the circuit, what will be the voltage gain of the circuit? NOTE: MOSFET output resistance must be taken into account in rd calculationsarrow_forwardA bipolar transistor is operating with vBE =+0.7 V and vBC = +0.3 V. By the strict definitionsgiven in the chapter on bipolar transistors, this transistoris operating in the saturation region. Use thetransport equations to demonstrate that it actuallybehaves as if it is still in the forward-active region.Discuss this result. (You may use IS = 10−15 A,αF = 0.98, and αR = 0.2.)arrow_forwardThe outer surface of a transistor is cooled convectively by a fan-induced flow of air ata temperature of 25 °C and a pressure of 1 atm. The transistor’s outer surface area is 5x 10 -4 m 2 . At steady state, the electrical power to the transistor is 3 W. Negligible heattransfer occurs through the base of the transistor. The convective heat transfercoefficient is 100 W/m 2 K.Determinei. the rate of heat transferbetween the transistor and theair, in Wii. the temperature at thetransistor’s outer surface, in °C.arrow_forward
- For the circuit shown in Fig. 8(c), find the collector current IC and VCE Use beta = 50 and VBE=0.7Varrow_forwardSubject : ELECTRONIC CIRCUIT ANALYSIS AND DEVICES Please give the DC ANALYSIS circuit and AC EQUIVALENT CIRCUIT of this problem before proceeding to find letters a, and b. (Note : Neglect Vbe)arrow_forwardIn the Mosfet circuit given below, R1+R2=50 kΩ, RD= 7.5 kΩ, VDD= 5V, VTP= -0.8 V, Kp= 0.2 mA/V2 is given. Calculate the ID current by determining the working region of the mosfet.arrow_forward
- The ac equivalent circuit for an amplifier is shown. Assume the capacitors have infinite value, RI =750Ω, RB =100 kΩ, RC =100 kΩ, and R3 =100 kΩ. Calculate the input resistance and output resistance for the amplifier if the BJT Q-point is (75 μA, 10 V). Assume βo =100 and VA =75 V.arrow_forwardPlease answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.arrow_forward(a) What is the total input capacitance in the circuit as shown if Cπ = 20 pF, Cμ = 1 pF, IC = 5 mA, and RL = 1 kΩ? What is the fT of this transistor? (b) Repeat for IC = 4 mA and RL = 2 kΩ.arrow_forward
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