Explanation Calculation: The expression for the I C Q is given by, I C Q = V C C R L Substitute 15 V for V C C and 1 k Ω for R L in the above equation. I C Q = 15 V 1 k Ω = 15 mA The expression for the I B Q is given by, I B Q = I C Q β Substitute 15 mA for I C Q and 100 for β in the above equation. I B Q = 15 mA 100 = 0.15 mA The expression for the maximum power delivered to the load is given by, P L ( max ) = V C C 2 2 R L Substitute 1 k Ω for R L and 15 V for V C C in the above equation. P L ( max ) = 15 2 2 ( 1 k Ω ) = 112.5 mW The required diagram is shown in Figure 1. Apply KVL to the input side of the Figure 1. − V T H + I B Q R T H + V B E + I E R E = 0 Substitute ( 1 + β ) I B Q for I E in the above equation. − V T H + I B Q R T H + V B E + ( 1 + β ) I B Q R E = 0 Substitute 0.15 mA for I B Q , 0.7 V for V B E , 0.1 k Ω for R E and 100 for β in the above equation. V T H = ( 0.15 mA ) R T H + 0.7 V + ( 1 + 100 ) ( 0.15 mA ) ( 0.1 k Ω ) .......

Microelectronics: Circuit Analysis and Design

4th Edition

ISBN: 9780073380643

Author: Donald A. Neamen

Publisher: McGraw-Hill Companies, The

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BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carri…

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Chapter 8, Problem D8.32P

To determine

The value of R1 , R2 and the value of the maximum power than is delivered to the load.

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Chapter 8, Problem 8.31P

Chapter 8, Problem 8.33P

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Microelectronics: Circuit Analysis and Design

Ch. 8 - Prob. 8.1EP Ch. 8 - Prob. 8.2EP Ch. 8 - Prob. 8.3EP Ch. 8 - Prob. 8.1TYU Ch. 8 - Prob. 8.2TYU Ch. 8 - Prob. 8.3TYU Ch. 8 - Prob. 8.4EP Ch. 8 - Prob. 8.5EP Ch. 8 - Prob. 8.7EP Ch. 8 - Prob. 8.4TYU

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