Consider the class−AB output stage shown in Figure 8.37. The transistor parameters are
Figure 8.37 Figure for Exercise TYU 8.8
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Microelectronics: Circuit Analysis and Design
- In the context of MOS devices, state briefly the advantages of:(a) constant field scaling(b) high-κ dielectrics(c) mid-gap metalsarrow_forwardIn the circuit in the figure, VGSQ = 6.8 V, IDQ = 2.4 mA, VGS(Th) = 3.3 V, k = 0.4x10-3 A/V2, RD = 5.6 kΩ, RF = 2.2 MΩ and rd = 25 kΩ. Accordingly, when a RL = 0.1 kΩ load is connected to the output of the circuit, what will be the voltage gain of the circuit? NOTE: MOSFET output resistance must be taken into account in rd calculationsarrow_forwardConsider a CE circuit, where trans-conductance is 50mΩ-1, diffusion capacitance is 100 pF, transition capacitance is 3 pF. IB = 20μA. Given base emitter dynamic resistance, rbe = 1000 Ω, input VI is 20*sin(107t). What is the short circuit current gain?arrow_forward
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