Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Question
Chapter 5, Problem 5.17P
To determine
Value of voltage VGS required to obtain the given value of resistance
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Design a 0.2-mA electronic current source to replacethe ideal source as shown. Use the circuittopology as shown(19) (e.g., QS and its threebias resistors). The base bias network should notuse more than 20 A of current.
For the circuit given below, let VBEQ=0.7 V, then the Q-point(VCEQ,ICEQ) equals:
For the silicon transistor used in the amplifier circuit shown below, at 25 oC görülen = 100 and ICo = 15 pA. Again in the circuit as Vs = 0 V;
a) Calculate the RC and RE resistance values required for ICQ = 1mA and VCEQ = 5V.
b) Calculate the relative sensitivity of IC to RB, S (IC, RB) (numerical value will be obtained).
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- For a circuit shown below ?గ=1.5kΩ, β=110, RS=0.5kΩ, RL=2kΩ. Calculate: (a) Voltage gain AV= vC/vS. (b) Current gain Ai=iC/ib. (c) Power gain AP=pC/pS. (d) If RE= 200Ω is connected between terminals E and G, find the input resistance Rin between terminals B and G.arrow_forwardFor the circuit below, let K n’∙W/L = 4mA/V^2.a) Find the value of I that causes the MOSFET to operate in saturation with anoverdrive voltage of 0.25V.b) What value of RD results in V D = 0V?c) Find the value of g m .d) Find the value of ro given V A = 25V (λ = 1/(25V)).e) If Rin = 1MΩ, find the value that RG must be.f) For Rsig = 1MΩ and RL = 40kΩ, find the value of the overall voltage gain vo/vsigarrow_forwardDetermine ?D and ?GS for the voltage divider bias configuration forthe JFET, for which we have the following parameter value of VD ≅ 8 V. Has the following data of the different elements of the circuit such as: R1 = 8.6 MΩ, R2 = 1 MΩ, RD = 6.6 kΩ, RS = 3.3 kΩ and powered by a 16 source volts.arrow_forward
- If V3=4,5V , find the gain VX, Ix , If , Io, Vo and Av, then calculate the current passing through the resistor R by connecting the resistance R to Vo point.arrow_forwardHey, can you please make sure this question is solved correctly and step by step solution to the way to approach and how it's done please. I want to learn how to do this type of problem. Design the circuit of Figure 5, that is, determine the values of RDand RS – so that the transistor operates at ID = 0.4mA and VD = +0.5V. TheNMOS transistor has Vt = 0.7V, nCox = 100A/V2, L = 1m, and W = 32m.Determine MOSFET operation mode (triode mode; saturation mode or cutoffmode). Explain. Use one of the equations below (a or b) for the drain current:arrow_forwardThe gate of a MOSFET transistor is initially uncharged. A voltage of 3V is applied starting at t = 0, causing a current to flow given by: I = 0.015exp(-106t) (a) What is the total charge delivered to the MOSFET gate for all time ( 0 < t < ∞ ). (b) What is the total energy delivered to the MOSFET gate for all time ( 0 < t < ∞ ).arrow_forward
- For the multi-stage amplifier shown below, given the following T1: K = 0.12 mAV ?, VGS (TH) = 5 V, IDQ = 6.7 mA, VGSO = 12.5 V, RD1 = 2.9 kQ, (Assume rd >> Rp) % 3D% 3D T2: Ipss = 6 mA, Vp = -3 V, Ipo = 2.9 mA, VGSQ = -0.95 V, RD2 = 2.4 kQ. (Assume rd >> Rp)% 3D T3: R1 = 48 kQ, R2 = 12 kQ, Rc = 2.2 kQ. ro = 25 kQ, and B = 140 Calculate Ay1. Ay2, Ay3, and the overall voltage gain Avtarrow_forwardAn npn transistor with IS = 1 × 10−16 μA, αF =0.975, and αR = 0.5 is operating with VB E = 0.70 Vand VBC = 0.50 V. By definition, this transistor isoperating in the saturation region. However, in thediscussion it was noted that this transistor actually behaves as if it is still in the forwardactive region even though VBC > 0. Why? Use thetransport model equations to justify your answerarrow_forwardAnswer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).arrow_forward
- What is the minimum voltage required on the drain of M3 to maintain it in pinch-off in the circuit shown if IREF = 100 μA, (W/L)1 = 5/1, (W/L)2 = 20/1, (W/L)3 = 20/1, K'n =25 μA/V2, VTN = 0.75 V, λ = 0V −1, and −VSS =−10 V?arrow_forward1.a/ When VGS is increased by 0.2 V, the increase of iD through transistor is found to be 25 mA. Calculate gm. b/ The graph opposite shows that when VGS = 4 V, then gm = 0.164 S. What increase in VGS is needed to increase iD by 15 mA?arrow_forwardAn NMOS transistor has K'n = 200 μA/V2. Whatis the value of Kn if W = 60μm, L = 3 μm?If W = 10 μm, L = 0.25 m? If W = 3 μm,L = 40 nm?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License