Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.27P
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The missing table entries.
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The parameters of the mosfets in the circuit formed with Qn (NMOS) and Qp (PMOS) elements are as follows: kn '(Wn / Ln) = kp'Wp / Lp = 1mA / V, Vtn = -Vtp = 1V, Δn = Δp = 0. When Vı = 0V, Vı = 2.5V, Vı = -2.5V, find the values of İDN, İDP and V0.
Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm.The process technology is specified to have Cox = 8 fF/μm2, μn = 450 cm2/V.s and Vtn= 0.55V.(a) Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID =(100+X) μA. Where X=Last digit of your ID+2.5.
here x=2
Design a four-resistor bias network for an npntransistor to give IC = 1 mA, VC E = 5 V, andVE = 3 V if VCC = 12 V and βF = 100. (b) Replaceyour exact values with the nearest values from theresistor and find the resultingQ-point
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- Q3 Draw the structures of NMOS and PMOS transistors showing the different materials, terminals, and dimensions. Full explain this question and text typing work only thanksarrow_forwardDesign a four-resistor bias network for an NMOStransistor to give a Q-point of (250μ A, 4.5 V) withVDD = 9 V and REQ ≅ 250 k Ω. Use the parametersarrow_forwardConsidering the dc operating conditions of the NMOS circuit in the figure, gm = 4.1 mS was obtained. Also, the load current IL flowing through RL when Rsig1 = 2 kΩ, Rsig2 = 3 kΩ, RF = 60 kΩ, R1 = 50 MΩ, R2 = 12 MΩ, RD = 4.7 kΩ, RS = 1.2 kΩ and RL = 10.2 kΩ What would be the value of ? (Vi1 = 20 mV, Vi2 = 30 mV) NOTE-1: Capacitors are negligible at mid-band frequency. NOTE-2: The NMOS output impedance will be taken into account and its value is rd = 20 kΩ.arrow_forward
- Considering the dc operating conditions of the NMOS circuit in the figure, gm = 4.1 mS was obtained. Also, the load current IL flowing through RL when Rsig1 = 2 kΩ, Rsig2 = 3 kΩ, RF = 60 kΩ, R1 = 50 MΩ, R2 = 12 MΩ, RD = 4.7 kΩ, RS = 1.2 kΩ and RL = 10.2 kΩ What would be the value of ? (Vi1 = 20 mV, Vi2 = 30 mV) NOTE-1: Capacitors are negligible at mid-band frequency. NOTE-2: The NMOS output impedance will be taken into account and its value is rd = 20 kΩ. a. 1,34 mA b. 0,40 mA c. 1,74 mA d. 0,94 mA e. 0,67 mA f. 2,01 mA g. 2,81 mA h. 2,41 mAarrow_forwardThe NMOS transistor shown in the circuit has k = 2 mA/V2 and VTH = 1 V. If V+ = 9 V and VG = 4 V, determine the drain current. Express your answer in milliamperes, accurate to two decimal places. Hint: The transistor is operating in linear mode.arrow_forwardA certain NMOS transistor has vGS(t) =2 V vDS(t) =5+2 sin(ωt) V iD(t) =3+0.01 sin(ωt) mA Which small-signal parameter (gm or rd) can be determined from this information? What is its value? For what Q point (VGSQ, IDQ and VDSQ) does this parameter apply?arrow_forward
- In the circuit given below, 3V is applied to the PMOS transistor input and VG is applied to the NMOS transistor input. Mosfet parameters are given in the image. Accordingly, determine the working areas of the MOSFets for VG = 1.arrow_forwardFind the rout resistance.The internal resistance of the MOS transistor will not be neglected The transistors are not the same .Therefore, the gm values are not the samarrow_forwardThe MOS capacitor has VTN = 1 Vand VG = 2 V. To what region of operation doesthis bias condition correspond? (b) Repeat for VG =−2 V. (c) Repeat for VG = 0.5 V.arrow_forward
- Design a four-resistor bias network for an NMOStransistor to give a Q-point of (100 μA, 6 V) withVDD = 12 V and REQ ≅250 kΩ . Use the parametersarrow_forwardWhich of the following is the value of the Rin's resistance in the circuit shown? (B = 150, VT = 25mV)arrow_forwardCan you solve the first three sub part a, b and c by explaining the your solution in detail, please. Thanks a lot. 3) Design a DC biasing network for a npn type Si BJT device using the parameters obtained the characteristics given in Figure. It is requested that, the design is to be independent of temperature sensitivity or least level of dependency to temperature variations comparing to other biasing networks. a) Draw the BJT network you prefer to design by into account the explanations above, and explain the reason for preferring this network b) Explain the aims and reasons in using of all the peripheral components handled on your network Note: Don’t forget using resistors and capacitors as peripheral elements whatever required for your each complete design in questions (i.e. input, output terminals etc.)arrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License