Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.31P
To determine
The values of expected output resistances.
Percentage change in drain current.
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We have an n-channel enhancement MOSFET with Vto=1 V and K=0.1 mA/V2. Given that vGS = 4 V, for what range of vDS is the device in the saturation region? In the triode region? Plot iD versus vGS for operation in the saturation region.
A field effect transistor operates with a drain current of 100 mA and a gate-source bias of-1V. The device has a gfs value of 0.25. If the bias voltage decreases to -1.1 V, determine the change in drain current, and the new value of drain current.
If VT =2V, K= 0.4mA/V^2 , Vdd =5V, Rd =Rs =1K for the n-channel MOSFET given in the figure, what is the voltage value of Vgs?
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- Find out the operating point current ICQ, and voltage VCEQ in the circuit shown. (VBE = 0.7 V, β of transistor is 200).arrow_forwardFor the MOSFET circuit given here, V to = 2V, K = 160μA/V2. Design the values of R1 and R2 such that the drain current (ID) is 0.5mAand the current through the R1 and R2 is one-tenth of ID. Assume the transistor isin saturation (Hint: μ = 1 x 10-6).arrow_forwardDesign a MOSFET circuit with zero bias using a 2N3797 that operates from a +9 V dc supply and produces a VDS of 4.5 V. The maximum current drawn from the source is to be 1 mA.arrow_forward
- You are given a D-MOSFET biased at VGS=0V. The manufacturer's data sheet specifies IDSS=20mAand VGS(off) =-5V. What is the value of the drain current? ______arrow_forwardFor a particular n-channel MOS technology, in which the minimum channel length is 0.2 μm, the associated value of λ is 0.5 V-1. If a particular device for which L is 1.0 μm operates in saturation at vDS = 1 V with a drain current of 100 μA, what does the drain current become if vDS is raised to 2 V? What percentage change does this represent? What can be done to reduce the percentage by a factor of 2?arrow_forwardThe PMOS transistor in the circuit shown has k = 2 mA/V2 and VTH = -1 V. If V+ = 6.5 V and VG = 4 V, determine the drain current. Express you answer in milliamperes, accurate to two decimal points. Hint: The transistor is operating in saturation mode.arrow_forward
- In MOSFET, If Vt = 1 V and the output resistance = 400K ohms, what is the output resistance if the threshold became 1 V?arrow_forwardCalculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 0.1 V,if W = 10 μm, L = 0.2 μm, VT N = 0.8 V, andK'n = 250 μA/V2. What is the value of Kn?arrow_forwardAn enhancement-type NMOS transistor hasVT = 2 V and iD = 1 mA when vGS = vDS = 3 V. Findthe value of iD for vGS = 4 V.arrow_forward
- Calculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 0.3 V,if W = 6μm, L = 0.5 μm, VT N = 0.80 V, andK'n = 200 μA/V2. What is the value of Kn?arrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 1) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These might be help as a guide to solve the problem.arrow_forwardPlease answer immediately. I'll give an upvote. Thank you. Consider a two-BJT configuration shown by the image. You may assume that both transistors are the same with the same β, VBE,on = 0.7 V, and VCE,EOS = 0.3 V. Determine the minimum voltage VBE that will turn ON both Q1 and Q2.arrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License