Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.22P
To determine
The largest value of
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The MOS capacitor has VTN = 1 Vand VG = 2 V. To what region of operation doesthis bias condition correspond? (b) Repeat for VG =−2 V. (c) Repeat for VG = 0.5 V.
5.1 A 0.18-um fabrication process is specified to have t = 4 nm, µ̟ = 450 cm'/N s, and V, = 0.5 V. Find the value of the process transconductance parameter k. For a MOSFET with minimum length %3D fabricated in this process, find the required value of W so that the device exhibits a channel resistance Ing of 1 k£2 at vos =1 V. %3D
The parameters of the mosfets in the circuit formed with Qn (NMOS) and Qp (PMOS) elements are as follows: kn '(Wn / Ln) = kp'Wp / Lp = 1mA / V, Vtn = -Vtp = 1V, Δn = Δp = 0. When Vı = 0V, Vı = 2.5V, Vı = -2.5V, find the values of İDN, İDP and V0.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- (a) An n-channel MOSFET has a mobility of 600 cm2/V · s and a channel length of 1 μm. What is the transistor’s fT if VGS − VT N = 0.25 V. (b) Repeat for a PMOS device with a mobility of 250 cm2/V · s. (c) Repeat for transistors in a new technology with L = 0.1 μm. (d) Repeat for transistors in a technology with L = 25 nm.arrow_forwardDesign a four-resistor bias network for an npntransistor to give IC = 1 mA, VC E = 5 V, andVE = 3 V if VCC = 12 V and βF = 100. (b) Replaceyour exact values with the nearest values from theresistor and find the resultingQ-pointarrow_forwardCalculate the on-resistance of an NMOS transistor with W/L = 10/1 for VGS = 5 V, VSB = 0,VT O = 1 V, and VDS = 0 V. (b) Calculate the onresistance of a PMOS transistor with W/L = 10/1for VSG = 5 V, VSB = 0, VT O = −1 V, andVSD = 0 V. (c) What do we mean when we say thata transistor is “on” even though ID and VDS = 0?(d) What must be the W/L ratios of the NMOS andPMOS transistors if they are to have the same onresistance as parts (a) and (b) with |VGS| = 3.0 V?arrow_forward
- Given the measurement, VS = 2.1 V, VDD = 18 V, Vp = - 5 V, RG = 1 MΩ, RS = 0.51 kΩ, & RD = 2 kΩ, determine VDS for JFET self-bias configuration.arrow_forwardThe NMOS transistor shown in the circuit has k = 2 mA/V2 and VTH = 1 V. If V+ = 9 V and VG = 4 V, determine the drain current. Express your answer in milliamperes, accurate to two decimal places. Hint: The transistor is operating in linear mode.arrow_forwardConsidering the dc operating conditions of the NMOS circuit in the figure, gm = 4.1 mS was obtained. Also, the load current IL flowing through RL when Rsig1 = 2 kΩ, Rsig2 = 3 kΩ, RF = 60 kΩ, R1 = 50 MΩ, R2 = 12 MΩ, RD = 4.7 kΩ, RS = 1.2 kΩ and RL = 10.2 kΩ What would be the value of ? (Vi1 = 20 mV, Vi2 = 30 mV) NOTE-1: Capacitors are negligible at mid-band frequency. NOTE-2: The NMOS output impedance will be taken into account and its value is rd = 20 kΩ.arrow_forward
- Considering the dc operating conditions of the NMOS circuit in the figure, gm = 4.1 mS was obtained. Also, the load current IL flowing through RL when Rsig1 = 2 kΩ, Rsig2 = 3 kΩ, RF = 60 kΩ, R1 = 50 MΩ, R2 = 12 MΩ, RD = 4.7 kΩ, RS = 1.2 kΩ and RL = 10.2 kΩ What would be the value of ? (Vi1 = 20 mV, Vi2 = 30 mV) NOTE-1: Capacitors are negligible at mid-band frequency. NOTE-2: The NMOS output impedance will be taken into account and its value is rd = 20 kΩ. a. 1,34 mA b. 0,40 mA c. 1,74 mA d. 0,94 mA e. 0,67 mA f. 2,01 mA g. 2,81 mA h. 2,41 mAarrow_forwardA certain NMOS transistor has vGS(t) =2 V vDS(t) =5+2 sin(ωt) V iD(t) =3+0.01 sin(ωt) mA Which small-signal parameter (gm or rd) can be determined from this information? What is its value? For what Q point (VGSQ, IDQ and VDSQ) does this parameter apply?arrow_forward(a) What is the equivalent W/L ratio of the NMOSswitching network in Fig.(b) when all of theNMOS transistors are on? (b) Repeat for the PMOSnetwork.arrow_forward
- What are the worst-case values of τPHL and τPLHfor the gate in Fig. when it is implementedusing only 2/1 transistors and drives a load capacitanceof 0.5 pF? Assume VDD =2.5 V.arrow_forwardAnswer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.arrow_forwardGiven that R1 = 10 kΩ R2 = 1 kΩ RD = 200 Ω, μnCox = 200 μA/V2, μpCox = 100 μA/V2, W/L = 20/0.18, λ = 0, and Vt = 0.4 V for NMOS and -0.4 V for PMOS, determine IG, ID, IS, VG, VD, and VS for the MOSFET circuits given above.arrow_forward
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