Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Question
Chapter 5.2, Problem 5.7E
(a)
To determine
The range of
(b)
To determine
The range of
(c)
To determine
The range of
(d)
To determine
The values of
(e)
To determine
The value of
(f)
To determine
The value of
To compare: The result obtained with the value found in part (e).
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Please help with this Field-Effect Transistor problem. The problem is typed below, see the attached diagram for reference.
5.57 In the circuit of Fig. P5.57, the NMOS transistor has |Vt| = 0.9 V and VA = 50 V, and operates with VD = 2 V. What it the voltage gain v0/vi? What do VD and the gain become for l increased to 1 mA?
An npn transistor with IS = 1 × 10-16 A, αF =0.975, and αR = 0.5 is operating with VBE = 0.70 V and VBC = 0.50 V. By definition, this transistor is operating in the saturation region. However, in the discussion of Fig. 5.17 it was noted that this transistor actually behaves as if it is still in the forward active region even though VBC > 0. Why? Use the transport model equations to justify your answer.
Since Vcc = 12 V, Vin = 690 mV, RB = 780 kΩ, RC1 = 27.9 Ω, RC2 = 25.4 Ω, RE = 470 Ω, RL = 47 Ω and β1 = β2 = 100 in the circuit in the figure Find the current (IL) flowing through RL?
NOTE-1: VBE1 = VBE2 = 0.7 V will be taken.
NOTE-2: Output impedances of transistors (r0) will be neglected.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- In the circuit given in the picture, the emitter follower is connected to a non-ideal voltage source Vs with a source resistance Rs.These are the value: beta =100Vbe = 0.7VVce,sat = 0V.The sub questions for this problem are:a. If Rs = 0 and Vs = 3V, determine the value of Vo.b. If Rs = 5k Ohms and Vs = 3V, determine the value of Vo.c. If Rs = 5k Ohms , determine the value of Vs that will cause the BJT to start saturating.arrow_forwardSince Vcc = 12 V, Vin = 721 mV, RB = 780 kohm, RC1 = 14.8 ohm, RC2 = 27.5 ohm, RE = 470 ohm, RL = 47 Q2 and B1 = B2= 100 in the circuit in the figure Find the current (1) flowing through RL? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: The output impedances (ro) of the transistors will be neglected.arrow_forwardSince Vcc = 12 V, Vin = 690 mV, RB = 780 kΩ, RC1 = 27.9 Ω, RC2 = 25.4 Ω, RE = 470 Ω, RL = 47 Ω and β1 = β2 = 100 in the circuit in the figure Find the current (IL) flowing through RL? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: Output impedances of transistors (r0) will be neglected. a. 16,56 mA b. 23,46 mA c. 8,28 mA d. 17,94 mA e. 20,70 mA f. 13,80 mA g. 26,22 mA h. 11,04 mAarrow_forward
- A transistor has Tox = 40 nm, VTN = 1 V,μn = 500 cm2/V ·s, L = 2 μm, and W = 20 μm.What are Kn and the saturated value of iD for thistransistor if VGS = 4 V? (b) The technology isscaled down by a factor of 2. What are the newvalues of Tox, W, L, VTN , VGS, Kn, and iD?arrow_forward1- Determine the Q-point of the transistor shown in fig.1 assuming the current gain , β , is equal to β = 100 . What is the power (PD ) dissipation in the transistor ? The circuit parameters are : R1 = 420 kΩ , RE = 2 kΩ , RC = 2 kΩ and VCC = 10 V . Take VBE = 0.7 V if the transistor is operating in the active region. IC = ………… , VCE = ……………, PD = …………arrow_forwardAn npn transistor with IS = 1 × 10−16 μA, αF =0.975, and αR = 0.5 is operating with VB E = 0.70 Vand VBC = 0.50 V. By definition, this transistor isoperating in the saturation region. However, in thediscussion it was noted that this transistor actually behaves as if it is still in the forwardactive region even though VBC > 0. Why? Use thetransport model equations to justify your answerarrow_forward
- DESIGN AND SIMULATION OF A TWO-STAGE TRANSISTORAMPLIFIER USING UTILIZING LTSPICE I. Circuit Design Schematic with component Valuesarrow_forwardThe outer surface of a transistor is cooled convectively by a fan-induced flow of air ata temperature of 25 °C and a pressure of 1 atm. The transistor’s outer surface area is 5x 10 -4 m 2 . At steady state, the electrical power to the transistor is 3 W. Negligible heattransfer occurs through the base of the transistor. The convective heat transfercoefficient is 100 W/m 2 K.Determinei. the rate of heat transferbetween the transistor and theair, in Wii. the temperature at thetransistor’s outer surface, in °C.arrow_forward(a) An n-channel MOSFET has a mobility of 600 cm2/V · s and a channel length of 1 μm. What is the transistor’s fT if VGS − VT N = 0.25 V. (b) Repeat for a PMOS device with a mobility of 250 cm2/V · s. (c) Repeat for transistors in a new technology with L = 0.1 μm. (d) Repeat for transistors in a technology with L = 25 nm.arrow_forward
- 5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.arrow_forwardIn the Common Emitter Amplifier shown, the emitter current is found to be equal to IE =1mA. Assuming that the collector resistance RC = 1 kΩ, Calculate The internal emitter resistance, r’e. The gain of this amplifier, Av. The voltage gain in dB. Given an input voltage of 50 mV, calculate the output voltage. Please answer 3-4arrow_forwardIn the circuit of the following Fig , RC = 300Ω; RE = 200Ω; R1 = 2 k Ω; R2 = 15 kΩ; VCC = 15 V, and β = 110 for the transistor. Assume that ICQ = IEQ and VCEsat = 0. Find the VCEQarrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
Diode Logic Gates - OR, NOR, AND, & NAND; Author: The Organic Chemistry Tutor;https://www.youtube.com/watch?v=9lqwSaIDm2g;License: Standard Youtube License