Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5.1, Problem 5.1E
To determine

The value of the process transduction parameter kn and the value of W for a MOSFET.

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Please answer ASAP, I'll upvote... The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the drain current of M2 given that IBIAS = 2mA and VOUT = 2.5V.
For the Circuit shown, Let: VCC = 3.3V R1 = 85 kΩ RE = 500 Ω R2 = 35 k Ω RC = 4k Ω β = 150 Using approximation, determine the Q-point parameters: IBQ, ICQ, and VCEQ. Indicate the exact numerical values, following the given unit.
A silicon transistor with B= 50, VBE =0.6 volt, Vcc 22.5 volt, Rc = 5.6 k, as shown in Fig.1. It is desire that the Q-point at (12 v, 1.5 mA) and stability factor S<=2. Calculate RE, R1, R2.

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License