Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5.2, Problem 5.4E
To determine
The changed value of
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Calculate the on-resistance of an NMOS transistor for VGS = 2 V and VGS = 5 V if Vtn = 1 V and Kn = 250μA/V2. What value of VGS is required for an on-resistance of 2 k?
Rd in the circuit to operate in the PMOS transistor saturation region.What should the operating range be? In this circuit; as kp = 2.5mA/V2 and Vtp = -0.95Vgiven. Rd:?
A particular MOSFET has VA = 10 V. For operation at 10 μA and 100 μA, what are the expected resistances? In each case, for a change in vDS of 1 V, what percentage change in drain current would you expect?
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- The PMOS transistor in the circuit shown has k = 2 mA/V2 and VTH = -1 V. If V+ = 6.5 V and VG = 4 V, determine the drain current. Express you answer in milliamperes, accurate to two decimal points. Hint: The transistor is operating in saturation mode.arrow_forwardCalculate the drain current for an NMOS transistor operating with VGS = 5 V and VDS = 10 V if VTN = 1 V, Kn = 1 μA/V2, and λ = 0.02 V−1. What is I D for λ = 0?arrow_forwardWhat is the on-resistance of an NMOS transistor with W/L = 100/1 if VGS = 5 V and VTN =0.65 V? (b) If VGS = 2.5 V and VT N = 0.50 V?arrow_forward
- The current source for a current switch is implementedwith a transistor and three resistors, as shown. What is the current IEE? What is theminimum permissible value of VREF if transistor QSis to remain in the forward-active region? Assumethat βF is large.arrow_forwardAn NMOS transistor is operating in the saturation region and is having a W/L ratio equal to 20. If the value of the threshold voltage is 0.5 V and the parameter kn' is equal to 90 mA/V2 then find out the value of the drain current. Assume that the value of the gate to source voltage VGS is 2.55 V.arrow_forwardSuppose that an NMOS transistor must conduct acurrent ID = 10 A with VDS ≤ 0.1 V when it is on.What is the maximum on-resistance of the transistor? If VG = 5 V is used to turn on the transistorand VT N = 2 V, what is the minimum value of Knrequired to achieve the required on-resistance?arrow_forward
- Figure Q4 shows an NMOS common source circuit. Given that VTN = 1 V, and Kn = 0.1 mA/V2a) Calculate iD and vDS.b) Find the power dissipated in the transistor.arrow_forwardWhat is the W/L ratio required for a PMOStransistor to have an on-resistance of 10Ω whenVGS = −5 V and VSB = 0? Assume VTP = −0.70 V.(b) Repeat for an NMOS transistor with VGS =+5 V and VBS = 0. Assume VTN = 0.70 Varrow_forwardFor a particular n-channel MOS technology, in which the minimum channel length is 0.2 μm, the associated value of λ is 0.5 V-1. If a particular device for which L is 1.0 μm operates in saturation at vDS = 1 V with a drain current of 100 μA, what does the drain current become if vDS is raised to 2 V? What percentage change does this represent? What can be done to reduce the percentage by a factor of 2?arrow_forward
- My recored value from my simulation for my drain source current for my MOSFET, IDS, = 18.5mA, but my theoretical value for IDS = 20mA. What resistance (not entirely captured in the theoretical prediction) results in this slightly lower IDS than expected?arrow_forwardWe have an n-channel enhancement MOSFET with Vto=1 V and K=0.1 mA/V2. Given that vGS = 4 V, for what range of vDS is the device in the saturation region? In the triode region? Plot iD versus vGS for operation in the saturation region.arrow_forward(a) What is the base-emitter voltage in the circuitshown? Use the transport equations and thetransistor parameters from Table shown (b) What isthe base-emitter voltage if βF = 80? (c) What isVBE if IB is increased to 1 mA and βF = 40?arrow_forward
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CMOS Tech: NMOS and PMOS Transistors in CMOS Inverter (3-D View); Author: G Chang;https://www.youtube.com/watch?v=oSrUsM0hoPs;License: Standard Youtube License