Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Videos
Question
Chapter 5, Problem 5.11P
(a)
To determine
The gate voltage for a p -channel MOSFET.
(b)
To determine
The highest voltage allowed at the drain.
(c)
To determine
The current for the given values of drive voltage.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
A MOSFET has a mobility of 500 cm2 /V · s and channel length of 0.25μm. What is its cutoff frequency if the gate voltage exceeds the threshold voltage by 1 V? (b) Repeat for a channel length of 40 nm.
Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm.The process technology is specified to have Cox = 8 fF/μm2, μn = 450 cm2/V.s and Vtn= 0.55V.(a) Find VGS and VDS that result in the MOSFET operating at the edge of saturation with ID =(100+X) μA. Where X=Last digit of your ID+2.5.
here x=2
Considering the given transistor circuit and given values(β=60; V BE =0,5 V; VCC =15V; R E=1K ; R c=10K ; R1=60K ;R2=30K ).a. Find the base, collector, and emitter currents b. Find the voltage gain of this circuit c. Find the voltage gain by ignoring the capacitor connected to the emitterd. Briefly describe the transistor active zone and state its importance
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.arrow_forwardCalculate the on-resistance of an NMOS transistor with W/L = 10/1 for VGS = 5 V, VSB = 0,VT O = 1 V, and VDS = 0 V. (b) Calculate the onresistance of a PMOS transistor with W/L = 10/1for VSG = 5 V, VSB = 0, VT O = −1 V, andVSD = 0 V. (c) What do we mean when we say thata transistor is “on” even though ID and VDS = 0?(d) What must be the W/L ratios of the NMOS andPMOS transistors if they are to have the same onresistance as parts (a) and (b) with |VGS| = 3.0 V?arrow_forwardHey, can you please make sure this question is solved correctly and step by step solution to the way to approach and how it's done please. I want to learn how to do this type of problem. Fig. 1 is a simplified structure of the MOSFET (NMOS) transistor.What are the requirements for MOSFET to operate in:a) triode mode?b) saturation mode?c) cutoff mode?Explainarrow_forward
- For a particular IC-fabrication process, the transconductance parameter k'n = 400 μA/V2, and Vt = 0.5 V. In an application in which vGS = vDS = Vsupply = 1.8 V, a drain current of 2 mA is required of a device of minimum length of 0.18 μm. What value of channel width must the design use?arrow_forward5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.arrow_forwardFrom the circuit shown, if the inputs A and B are both 1, Q3 is/has A) a collector-emitter voltage equal to 0 V b) in the active region C) saturated D) at cut-offarrow_forward
- The switches as shown can be implemented using MOSFETs, as shown. What must be the W/L ratios of the transistors if the onresistance of the transistor is to be less than 1 percent of the resistor 2R = 12 kΩ? Use VREF = 3.0V. Assume that the voltage applied to the gate of the MOSFET is 5Vwhen b1 = 1 and 0Vwhen b1 = 0. For the MOSFET, VTN = 1 V, Kn = 50 μA/V2, 2φF = 0.6 V, and γ = 0.5√V.arrow_forwardA transistor has an a of 0.98 and a collector-to-base leakage current of 0.02 uA. (a) Find its collector-to-emitter leakage current. (b) Find the beta of the transistor. (c) Find (the exact) IC when IB = 0.04 mA. (d) Find the approximate IC, neglecting leakage current.arrow_forwardFor an n-channel depletion-mode MOSFET, in the saturation region ID = 8mA when VGS = 0, and the dynamic (incremental) output resistance r0 is infinite. The threshold voltage (or pinch-off voltage) is VTR = VP = –2.5V. For VGS = 0, find the smallest value of VDS at which the MOSFET is in saturation. For VDS equal to this value, find ID when (i) VGS = –1V, (ii) VGS = –2V, (iii) VGS = –3V, (iv) VGS = –4V.arrow_forward
- Consider a non-ideal MOSFET that has been fabricated on a siliconwafer with initial uniform boron doping of 7.5 × 1015 cm-3. The gateoxide has a thickness tox = 35 nm, fixed charge Qf /q = 5.0 × 1010 cm-2and mobile charge Qm /q = 2.5 × 1010 cm-2 (assume other oxidecharges are negligibly small). The gate has been fabricated frompolysilicon to give a gate length of 150 nm. The work functiondifference between the polysilicon gate and the silicon is –0.35 V.Assuming a temperature of 300 K and ignoring short channel effects,calculate the threshold voltage of the MOSFET if there is zero biasapplied between the source and the silicon substrate.arrow_forwardIn the Mosfet circuit given below, R1+R2=50 kΩ, RD= 7.5 kΩ, VDD= 5V, VTP= -0.8 V, Kp= 0.2 mA/V2 is given. Calculate the ID current by determining the working region of the mosfet.arrow_forwardFor many years, MOS devices were scaled tosmaller and smaller dimensions without changingthe power supply voltage. Suppose that the widthW, length L, and oxide thickness Tox of a MOS transistor are all reduced by a factor of 2. Assume thatVT N , vGS, and vDS remain the same. (a) Calculatethe ratio of the drain current of the scaled device tothat of the original device. (b) By what factor hasthe power dissipation changed? (c) By what factorhas the value of the total gate capacitance changed?(d) By what factor has the circuit delay Tchanged?arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License