Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5.1, Problem D5.3E
To determine
The change in drain current
The case in which the MOSFET leaves the saturation region.
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"Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base."
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In single transistor amplifier design, it is observed that the voltage gain will always decrease as the load resistance increases.
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The saturation region of MOSFET indicates that the drain current no longer depends on the source-drain voltage while the saturation region of BJT indicates that the collector current no longer depends on the collector-emitter voltage.
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A bipolar junction transistor can be connected to behave like a diode while a field effect transistor can not be connected to behave like a diode.
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False
A voltage follower circuit is usually designed to have the power gain slightly less than 1 with any passive load.
True
False
A clipper circuit regulates DC voltage input while a clamp circuit regulates AC voltage input.
True
False
We have an n-channel enhancement MOSFET with Vto=1 V and K=0.1 mA/V2. Given that vGS = 4 V, for what range of vDS is the device in the saturation region? In the triode region? Plot iD versus vGS for operation in the saturation region.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- 1. In MOSFET, the potential on the gate controls the carrier concentration in the semiconductor region beneath the gate so that the channel conductivity can be enhanced. True False 2. In triode region, the drain current in the FET exhibits a nearly linear relationship with drain-source voltage as the name “transistor” indicates (i.e., a contraction of transfer resistor). In triode region, the drain current in the FET exhibits a nearly linear relationship with drain-source voltage as the name “transistor” indicates (i.e., a contraction of transfer resistor). True False 3. In saturation region or pinch-off region, the drain current does not depend on drain-source voltage if one ignores the channel length modulation effect. In saturation region or pinch-off region, the drain current does not depend on drain-source voltage if one ignores the channel length modulation effect. True False 4. For a given capacitance and gate size, NMOS logic device has…arrow_forwardFor the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.arrow_forwardDraw, Illustrate and label your schematic diagram before solving the problem. 1) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction. These might be help as a guide to solve the problem.arrow_forward
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- For the circuit shown below, find the emitter, base and collector voltages and currents. Use ? = 35, but assume |???| = 0.8 ?, independent of current level.arrow_forwardCalculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 0.1 V,if W = 10 μm, L = 0.2 μm, VT N = 0.8 V, andK'n = 250 μA/V2. What is the value of Kn?arrow_forwardDetermine the VDS and the drain current for the E-MOSFET circuit shown. The data sheet for this particular MOSFET gives ID(ON)=500 mA at VGS=10 V and VGS(th)=1 V.arrow_forward
- Q3 a) A transistor can be operated in saturation, active and cut-off region. What are the normal conditions of bias across the transistor to operate it in these different modes? b) Draw the complete circuit diagram of a transistor connected in CC mode with proper biasing along with its input output characteristics c) Draw the complete circuit diagram of a transistor connected in CE mode with proper biasing along with its input output characteristics.arrow_forward2: Determine the base-emitter voltage VBE for the circuit shown below.arrow_forwardIf VT =2V, K= 0.4mA/V^2 , Vdd =5V, Rd =Rs =1K for the n-channel MOSFET given in the figure, what is the voltage value of Vgs?arrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License