Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.35P
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The factor by which the output resistance
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Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
An NMOS transistor has μn = 400 cm2/V-sec, L = 0.5 mand is biased at 0.25 V above threshold. What value of LS is required to achieve an input resistance of 75 Ω as shown.
(a) An n-channel MOSFET has a mobility of 600 cm2/V · s and a channel length of 1 μm. What is the transistor’s fT if VGS − VT N = 0.25 V. (b) Repeat for a PMOS device with a mobility of 250 cm2/V · s. (c) Repeat for transistors in a new technology with L = 0.1 μm. (d) Repeat for transistors in a technology with L = 25 nm.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- The parameters of the mosfets in the circuit formed with Qn (NMOS) and Qp (PMOS) elements are as follows: kn '(Wn / Ln) = kp'Wp / Lp = 1mA / V, Vtn = -Vtp = 1V, Δn = Δp = 0. When Vı = 0V, Vı = 2.5V, Vı = -2.5V, find the values of İDN, İDP and V0.arrow_forwardConsidering the given transistor circuit and given values(β=60; V BE =0,5 V; VCC =15V; R E=1K ; R c=10K ; R1=60K ;R2=30K ).a. Find the base, collector, and emitter currents b. Find the voltage gain of this circuit c. Find the voltage gain by ignoring the capacitor connected to the emitterd. Briefly describe the transistor active zone and state its importancearrow_forwardFind the Q-point for the transistor ifR = 20 kΩ , VTO = 1 V, and W/L = 2/1.arrow_forward
- A transistor in a circuit showed has the following Maximum rating Pdmax=800mAw, Vcemax=15v, Icmax=100mA. Determine the maximum value to which Vce can be adjusted with out exceeding any rating which rating will be exceeded firstarrow_forwardFind the rout resistance, the ro internal resistance of the mos transistor will not be neglected, transistör Gm vapura are not the samearrow_forwardWhat is the minimum bandwidth of the NMOS current mirror as shown if IS = 150 μA, K n = 25 μA/V2, λ = 0.02 V−1, CGS1 = 3 pF, CGD1 = 0.5 pF, and (W/L)1 = 5/1 = (W/L)2?arrow_forward
- Determine the small-signal model of Q1 for the circuit above. (IS = 8 × 10−16 A, β = 100, and VA =∞. ) (Find the values of gm , rπ)arrow_forwardFrom the circuit shown, if the inputs A and B are both 1, Q3 is/has: a.) a collector-emitter voltage equal to 0 Vb.) in the active region c.) at cut-off d.) saturatedarrow_forwardPlease answer immediately and correctly. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find kp and kn.arrow_forward
- Problem: Fx=(AB+CD+EF+G)' a. Draw its equivalent transistor circuit. b. Determine if the function has an Euler's path. please draw the equivalent Euler's path. C. Whether the circuit has a Euler's path or not, draw the stick diagram.arrow_forwardAnswer ASAP. I'll upvote. Thank you. Given: The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal ofM3? If yes, then where is it? If no, then what happens to the small signal model?).arrow_forward5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.arrow_forward
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