Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.29P
(a)
To determine
Maximum resulting mismatch in the drain currents.
(b)
To determine
Maximum resulting mismatch in the drain currents.
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Calculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 0.3 V,if W = 6μm, L = 0.5 μm, VT N = 0.80 V, andK'n = 200 μA/V2. What is the value of Kn?
Calculate the drain current in an NMOS transistorfor VGS = 0, 1 V, 2 V, and 3 V, with VDS = 0.1 V,if W = 10 μm, L = 0.2 μm, VT N = 0.8 V, andK'n = 250 μA/V2. What is the value of Kn?
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Compute the drian current flow IDS in PMOS transistor when Vd=0.9v , Vs=2v and Vg=0.5v assume the transistor W/l Ratio=?Hinds :=1
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For an channel MOSFET , if conduction perameter (kn) is 0.249 mA/v2 , drain to source voltage (vds) is VTN and gate to source voltage vgs is 2VTN where VTN=0.75v the current will be ?Hinds : =1
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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- Calculate the drain current in an NMOS transistor if Kn = 250 μA/V2, VTN = −3 V, λ = 0, VGS = 0 V, and VDS = 6 V. (b) Repeat assuming λ = 0.025 V−1arrow_forwardThe figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0.NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6VPMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V (a) NMOS: VGS = 2.5V , VDS = 2.5V . PMOS: VGS = −0.5V , VDS = −1.25V .arrow_forwardThe figure below shows NMOS and PMOS devices with drain, source, and gate ports annotated. Determine the mode of operation (saturation - velocity saturation or channel pinch-off, linear, or cutoff) and drain current ID for each of the biasing configurations given below, using the following transistor data. Assume (W/L) = 1 and VSB = 0.NMOS: k'n = 115µA/V2, VT0 = 0.43V, λ = 0.06V−1, VDSAT = 0.6VPMOS: k'p = −30µA/V2, VT0 = −0.4V, λ = −0.1V−1, VDSAT = −1.0V (b) NMOS: VGS = 3.3V , VDS = 2.2V . PMOS: VGS = −2.5V , VDS = −1.8V .arrow_forward
- My recored value from my simulation for my drain source current for my MOSFET, IDS, = 18.5mA, but my theoretical value for IDS = 20mA. What resistance (not entirely captured in the theoretical prediction) results in this slightly lower IDS than expected?arrow_forwardCalculate the drain current in an NMOS transistor if Kn = 500 μA/V2, VTN = 1 V, λ = 0.03 V−1,VGS = 4 V, and VDS = 5 V. (b) Repeat assumingλ = 0.arrow_forwardCalculate the drain current for the NMOS transistor operating withVGS = 4 V and VDS = 5 V if VTN = 1 V, Kn = 25 μA/V2, and λ = 0.01 V−1. Repeat for VGS = 5 Vand VDS = 10 V.arrow_forward
- A PMOS transistor is operating with VBS = 0 V,VGS = −1.5 V, and VDS = −0.5 V. What are the region of operation and drain current in this device if W/L = 40/1?arrow_forwardWhat is the region of operation and drain current of an NMOS transistor having VTN = 1 V, Kn = 1 mA/V2, and λ = 0.02 V−1 for (a) VGS = 0 V, VDS = 1 V; (b) VGS = 2 V, VDS =0.5 V; (c) VGS = 2 V, VDS = 2 V?arrow_forwardSuppose we have an NMOS transistor that has gm=2 mS and rd=5 kΩ for a Q point of and VGSQ = 2 V, IDQ = 4 mA, and VDSQ = 10 V. Sketch the drain characteristics to scale for a small region around the Q point, say, for vGS = 1.8, 2.0, and 2.2 V and for 9.0<vDS<11.0 V.arrow_forward
- Calculate the drain current for an NMOS transistor operating with VGS = 5 V and VDS = 10 V if VTN = 1 V, Kn = 1 μA/V2, and λ = 0.02 V−1. What is I D for λ = 0?arrow_forwardthe transistor in the circuit above has gm=1.06mS and ro=16Kohm. Given the following condition: R1=770Kohm, R2=890Kohm, RD=5.4Kohm, R3=20Kohm, R6=7.1Kohm, Rsig=1.1Kohm. determine the intrinsic drain resistance, Rid, in Kohmarrow_forward1. Base Current 2. Collector Current 3. Emitter Current 4. Emitter Voltage 5. Base Voltage 6. Collector Voltage 7. VCE=? 8. Collector Current at saturation 9. VCE at cut-off 10. Q-pt=?arrow_forward
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