Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.61P
(a)
To determine
The value of voltages
(b)
To determine
The value of voltages
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5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.
In the circuit in the figure, VGSQ = 6.8 V, IDQ = 2.4 mA, VGS(Th) = 3.3 V, k = 0.4x10-3 A/V2, RD = 5.6 kΩ, RF = 2.2 MΩ and rd = 25 kΩ. Accordingly, when a RL = 0.1 kΩ load is connected to the output of the circuit, what will be the voltage gain of the circuit?
NOTE: MOSFET output resistance must be taken into account in rd calculations
The ac equivalent circuit for an amplifier is shown . Assume the capacitors have infinite value, RI = 10 kΩ, RG = 1 MΩ, RD = 3.9 kΩ, and R3 = 33 kΩ. Calculate the voltage gain for the amplifier if the MOSFET Q-pointis (2 mA, 7.5 V). Assume Kn = 1 mA/V2 and λ = 0.015 V−1.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Design the circuit of Fig. P5.43 to establish a drain current of 0.1 mA and a drain voltage of +0.2 V. The MOSFET has Vt = 0.2 V, μnCox = 400 μA/V2, L = 0.5 μm, and W = 4 μm. Specify the required values for RS and RD. Assume λ = 0.arrow_forwardFrom the circuit shown, if the inputs A and B are 0 and 1 respectively, Q5 is/has/will a) a negative base-collector voltage b) at cut-off c) a collector-emitter voltage approximately 0 V d) cause the LED to turn offarrow_forwardConsidering the given transistor circuit and given values(β=60; V BE =0,5 V; VCC =15V; R E=1K ; R c=10K ; R1=60K ;R2=30K ).a. Find the base, collector, and emitter currents b. Find the voltage gain of this circuit c. Find the voltage gain by ignoring the capacitor connected to the emitterd. Briefly describe the transistor active zone and state its importancearrow_forward
- An npn transistor with IS = 5 × 10−16 μA, αF =0.95, and αR = 0.5 is operating with VB E = 0.3 Vand VBC = −5 V. This transistor is not truly operating in the region defined to be cutoff, but we still saythe transistor is off. Why? Use the transport modelequations to justify your answer. In what region isthe transistor actually operating according to ourdefinitions?arrow_forwardConsider the transistor characteristics of Fig. 5.21. (a) Are these the characteristics of a JFET, d-mosfet, or e-mosfet? (b) Make a table of the given Vgs values and the corresponding Id(sat) values. Also include a column in the table giving Id(sat). (c) Make a plot of Id(sat) versus Vgs. Find the slope and y-intercept of the plot and use these to determine values for K and Vt in the model equation Eq. (5.3).ANSWER TO (c) MUST BE K = 1 mA/V2, Vt = −3 Varrow_forwardThe ac equivalent circuit for an amplifier is shown. Assume the capacitors have infinite value, RI = 100 kΩ, RG = 6.8MΩ, RD = 50 kΩ, and R3 = 120 kΩ. Calculate the voltage gain for the amplifier if the MOSFET Q-point is (100 μA, 5 V). Assume Kn = 450 μA/V2 and λ = 0.02 V−1.arrow_forward
- In the Mosfet circuit given below, R1+R2=50 kΩ, RD= 7.5 kΩ, VDD= 5V, VTP= -0.8 V, Kp= 0.2 mA/V2 is given. Calculate the ID current by determining the working region of the mosfet.arrow_forwardAnswer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.arrow_forwardDesign a Single-Stage Common Emitter Class A Amplifier Specifications:Voltage Divider Bias Circuit Supply: Any value from 10Vdc to 24VdcLoad: 1kΩVoltage Gain: Any value from 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50mVp-pTransistor: Si, β = 75 • Base-Collector capacitance = 8pF • Base-Emitter Capacitance = 25pF a) compute for the biasing resistances.b) determine the dc transistor terminal voltages and transistor currents.arrow_forward
- The three terminals of an n-channel enhancement-mode MOSFET are at potentials of 4, 5, and 10 V with respect to ground. Draw the circuitsymbol, with the appropriate voltages at each terminal,if the device is operatinga. In the ohmic regionb. In the active regionarrow_forwardThe ac equivalent circuit for an amplifier is shown . Assume the capacitors have infinite value, RI = 750 Ω, RB = 100 kΩ, RC = 62 kΩ, and R3 = 100 kΩ. Calculate the voltage gain and input resistance for the amplifier if the BJT Q-point is (40μA, 10 V). Assume βo = 100 and VA = 75V.arrow_forwardFrom the circuit shown, if the inputs A and B are both 1, Q3 is/has A) a collector-emitter voltage equal to 0 V b) in the active region C) saturated D) at cut-offarrow_forward
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