Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.52P
To determine
The new values of the current
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From the circuit shown, if the inputs A and B are 0 and 1 respectively, Q5 is/has/will a) a negative base-collector voltage
b) at cut-off
c) a collector-emitter voltage approximately 0 V
d) cause the LED to turn off
Please help with this Field-Effect Transistor problem. The problem is typed below, see the attached diagram for reference.
5.57 In the circuit of Fig. P5.57, the NMOS transistor has |Vt| = 0.9 V and VA = 50 V, and operates with VD = 2 V. What it the voltage gain v0/vi? What do VD and the gain become for l increased to 1 mA?
An npn transistor with IS = 5 × 10−16 μA, αF =0.95, and αR = 0.5 is operating with VB E = 0.3 Vand VBC = −5 V. This transistor is not truly operating in the region defined to be cutoff, but we still saythe transistor is off. Why? Use the transport modelequations to justify your answer. In what region isthe transistor actually operating according to ourdefinitions?
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
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Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Consider the transistor characteristics of Fig. 5.21. (a) Are these the characteristics of a JFET, d-mosfet, or e-mosfet? (b) Make a table of the given Vgs values and the corresponding Id(sat) values. Also include a column in the table giving Id(sat). (c) Make a plot of Id(sat) versus Vgs. Find the slope and y-intercept of the plot and use these to determine values for K and Vt in the model equation Eq. (5.3).ANSWER TO (c) MUST BE K = 1 mA/V2, Vt = −3 Varrow_forwardConsidering the given transistor circuit and given values(β=60; V BE =0,5 V; VCC =15V; R E=1K ; R c=10K ; R1=60K ;R2=30K ).a. Find the base, collector, and emitter currents b. Find the voltage gain of this circuit c. Find the voltage gain by ignoring the capacitor connected to the emitterd. Briefly describe the transistor active zone and state its importancearrow_forwardAn npn transistor with IS = 1 × 10-16 A, αF =0.975, and αR = 0.5 is operating with VBE = 0.70 V and VBC = 0.50 V. By definition, this transistor is operating in the saturation region. However, in the discussion of Fig. 5.17 it was noted that this transistor actually behaves as if it is still in the forward active region even though VBC > 0. Why? Use the transport model equations to justify your answer.arrow_forward
- For the MOSFET circuit given here, V to = 2V, K = 160μA/V2. Design the values of R1 and R2 such that the drain current (ID) is 0.5mAand the current through the R1 and R2 is one-tenth of ID. Assume the transistor isin saturation (Hint: μ = 1 x 10-6).arrow_forwardIn the circuit shown, RL = 2 k , VCC =15 V, and −VEE = −15 V. (a) What is the maximumvalue of RE that can be used if vO is to reach−12.5 V? (b) What is the emitter current of Q1when vO = +12.5 V?arrow_forwardDetermine Vce for the given transistor configuration with the given parameters: Vcc = 17 V, Rc= 15,217 ohm, Rb= 11,473 ohm, Re 17,553 ohm, Vee -12 V and current gain = 147. Consider Ic to be approximately the same as Ie.arrow_forward
- 5. Choose the correct answer: a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. ¢) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vs is positive. 2. Vgs is negative. 3. Vas =0. d) A certain amplifier has an Rp=1KQ. When a load resistance of 1KQ is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.arrow_forwardPlease help with the solution to this homework problem. I do not understand how to replace the transistor with its hybrid π model. This section covers BJTs.arrow_forwardcorrect the sentence: The non- linear (active) operating region of a transistor lies along the load line above saturation and below cutoff.arrow_forward
- 13. Bipolar Junction Transistor is considered as: gate-controlled device current-controlled device voltage controlled device base controlled device 18. Which BJT configuration provides very high output impedance? Common Base Common Collector Common Emitter Common Gate 19. Which BJT configuration provides high current gain? Common People Common Emitter Common Collectar Common Basearrow_forwardKnowing the equation of collector current IC for the transistor amplifier circuit, please calculate the current and voltage stabilization factors. Rc=2000ohm Re=500ohm Rb=500ohm Rb=1000ohm Beta0=200arrow_forwardAnswer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.arrow_forward
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