Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
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Chapter 5, Problem 5.4P

(a)

To determine

The factor by which rDS resistance change for the given conditions.

(b)

To determine

The factor by which rDS resistance changefor the given condition.

(c)

To determine

The factor by which rDS resistance change for the given condition.

(d)

To determine

The factor by which rDS resistance change for the given condition.

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For many years, MOS devices were scaled tosmaller and smaller dimensions without changingthe power supply voltage. Suppose that the widthW, length L, and oxide thickness Tox of a MOS transistor are all reduced by a factor of 2. Assume thatVT N , vGS, and vDS remain the same. (a) Calculatethe ratio of the drain current of the scaled device tothat of the original device. (b) By what factor hasthe power dissipation changed? (c) By what factorhas the value of the total gate capacitance changed?(d) By what factor has the circuit delay Tchanged?
7. A transistor operating with nominal gm of 70 mA/V has a ß that ranges from 60 to300. Also, the bias circuit, being less than ideal, allows a 20% variation in Ic. What isthe largest value found of the resistance looking into the base?
(a) What is the equivalent W/L ratio of the NMOSswitching network in Fig.(b) when all of theNMOS transistors are on? (b) Repeat for the PMOSnetwork.

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Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition

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