Consider the JFET diff-amp shown in Figure P11.56. The transistor parameters are:
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Microelectronics: Circuit Analysis and Design
- 2. The SNRo of a receiver is determined to be 35.937dB. Determine the SNRi in dB, if the modulation index is kept at 2 and the modulating signal is determined to have a peak voltage of 12.452. It is also noted that the system's sensitivity to changes in frequency is 200.718Hz/V. This modulator is using the maximum frequency deviation.arrow_forwardfor the follower circuit above, Rsig=2Kohm, R1=266Kohm, R2=115Kohm, Rc=5Kohm, R3=1.3Kohm, R6=4.2Kohm. if the transistor has gm=0.6mS and C3 is used for dominant pole design of lower corner frequency f=4KHz. determine the value of C3 in nFarrow_forwardPlease answer correctly and as soon as possible. I'll give upvote. Thank you. In the common emitter amplifier given, R1=50Ω, R2=1kΩ and CL=1pF. Determine the quiescent collector current, ICQ, needed such that the unity gain frequency, fu, is equal to 2.4 GHz. Show the complete solution and state all assumptions. The BJT parameters are as follows: β→∞,VA→∞, and Cπ=50 femtofarad (fF). Ignore all other parasitic capacitances and use VT=26mV.arrow_forward
- 1. What is the order of the RC filter transfer function? 3rd 2nd 4th 1st 2. Why are unity gain amplifiers used? To separate complicated chains in signal transmission into separate simple circuits To filter the signal To amplify the signal To “condition the signal” so there is no voltage dividersarrow_forwardIn the circuit given in the figure, what is the voltage gain (Av) of the circuit when = 100, r0 = 40 kΩ, RB = 360 kΩ, RC = 3.3 kΩ, RE = 220 Ω, Rs = 15 kΩ and RL = 166 kΩ?NOTE-1: The output impedance r0 of the transistor will be taken into the calculations.NOTE-2: Capacitors are negligible at mid-band frequency.arrow_forwardanswer all A - Explain the relation of MOSFET input current and input impedance and their effect on the functionality of the device. B- Explain how to increase the efficiency of the solar cells (PV cells) through the integration of antennas. C- List three conditions need to be considered to choose a MOSFET for switching applications.arrow_forward
- 4--In the given circuit, n MOSFETs are used.Q1, Q2,….. Parameters of Qn MOS transistors Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1=(W/L)2=….=(W/L)n=20a) VGS=?, ID=?, gm=?b) Find the input and output impedance.c) Find the voltage gain.arrow_forwardFor the NMOSFET in the circuit below, K = 4.00mA/V^2, VTHN = 1.00V, l = 0V^-1, and VIN = 4.00V.a. Draw the large signal model and small signal model of the circuit. b. Solve for IDS and VOUT and verify any assumptions you made. c. Derive an equation for the small signal gain of the circuit, vout / vin as a function of the vin radian frequency, w.arrow_forwardConsider a voltage-divider configuration of n-channel enhancement-type MOSFET where R1 = 12 MΩ, R2 = 7 MΩ, RD = 3 kΩ, RS = 1 kΩ. The MOSFET has a threshold voltage VGS(Th) = 3V, and one example point on the transfer characteristics curve is VGS(on) = 6V, ID(on) = 5 mA. Determine VGSQ, IDQ, Vs, VD, VDS assuming VDD = ( 80 ÷ 10 ) +20 Varrow_forward
- What is the voltage gain of the common-emitter amplifier as shown? Assume βF = 135, VCC = VEE = 10 V, R1 = 20 kΩ, R2 = 62 kΩ,RC = 13 kΩ, and RE = 3.9 kΩ.arrow_forwardIn the circuit in the figure, VGSQ = 6.8 V, IDQ = 2.4 mA, VGS(Th) = 3.3 V, k = 0.4x10-3 A/V2, RD = 5.6 kΩ, RF = 2.2 MΩ and rd = 25 kΩ. Accordingly, when a RL = 0.1 kΩ load is connected to the output of the circuit, what will be the voltage gain of the circuit? NOTE: MOSFET output resistance must be taken into account in rd calculationsarrow_forward4) By drawing the small signal model of the circuit given below, we can determine the total voltage and current gain values of the circuit, without the bypass capacitor on and without the bypass capacitor. Calculate separately for the two cases as it will be in the circuit (connected to the emitter end of the transistor). (β = 100, rS = 600 Ω, R1 = 27 KΩ, R2 = 4.7 KΩ, RC = 3.3 KΩ, RE = 680 Ω, RL= 15 KΩ, VCC = 10 V)arrow_forward
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