The output stage in the circuit shown in Figure P 11.86 is a Darlington pair emitter-follower configuration. Assume
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Microelectronics: Circuit Analysis and Design
- 1) Find the operating point of the transistor by drawing the load line of the BJT transistor circuit given below. Calculate the voltage values VE and VC. (β = 100, VBE = 0.7 V, R1 = 10 KΩ, RC = 4.7 KΩ, RE = 3.3 KΩ, VCC = 10 V, VEE = - 4 V)arrow_forwardIn the push-pull stage given (in the photo attached), IS1 = 5 × 10−17 A and IS2 = 8 × 10−17 A. Calculate the value of VB so as to establish a bias current of 5 mA in Q1 and Q2 (for Vout = 0). If the peak input swing is 2 V and RL = 8Ω : Calculate the small-signal voltage gain for Vout ≈ 0 Use the gain obtained in (i) to estimate the output voltage swing. Estimate the peak collector current of Q1 assuming that Q2 still carries 5 mAarrow_forwardA MOSFET common-source amplifier must amplify a sinusoidal ac signal with a peak amplitude of 0.4 V. What is the minimum value of VGS −VT Nfor the transistor? If a voltage gain of 26 dB is required, what is the minimum power supply voltage?arrow_forward
- 2. A load of 8Ω is supplied by a single-switch Direct Current (DC) chopper with an inputvoltage of 40V. The switching frequency is 800Hz, the duty ratio is 0.4, and thetransmission voltage drop of the transistor is 2.4V a. Draw the chopper circuit presented in the question b. Find the switching period with the duty time of BJT c. Draw the load voltage, load current, BJT current, BJT voltage along two periods d. Find the output voltage. Is the achieved load voltage the average value or the effectivevalue e. Find the output power f. Find the average value and effective value of BJT current g. Find the power loss of BJT h. Find the DC source current i. Find the circuit efficiencyarrow_forwardDesign a two-stages amplifier circuit MOSFET-BJT (no bypass for the second BJT, all BJTs are in maxswing condition)Rin=1 million Ohm, Rout=4K Ohm, Gv=15. The input signal is a sine signal, amplitude=1 V, F=1K Hz and the resistance=100K Ohmarrow_forwardDetermine Vce for the given transistor configuration with the given parameters: Vcc = 17 V, Rc= 15,217 ohm, Rb= 11,473 ohm, Re 17,553 ohm, Vee -12 V and current gain = 147. Consider Ic to be approximately the same as Ie.arrow_forward
- Design the bias circuit to give aQ-point of IC = 20 μA and VC E = 0.90 V ifthe transistor current gain is βF = 50 and VB E =0.65 V. What is the Q-point if the current gain ofthe transistor is actually 125?arrow_forwardInstruction/s: Draw, Illustrate and label your schematic diagram before solving the problem.2.) Given a Collector -Feedback Biased transistor circuit with voltage at common collector is +10v ,base resistor is 100k ohms, Collector resistor is 10k ohms and Base current is 8.38 micro ampere, ,Voltage at Base-emitter junction is 0.7v. Determine Beta DC , Collector current and Voltage at collector-emitter junction. These might help as a guide to answer the problem...arrow_forwardThe given circuit is a 2N4403 PNP common collector amplifier. Let VCC=12V, VEE=-12V, R1=52.5kΩ, R2=33kΩ, and RE=2.5kΩ. Determine IB, IC, IE, VB, VC, and VE. Start by initially assuming |VBE| =0.7V or and assuming a value of beta (β). Where to look for the value of β? (Hint: It’s in the transistor model assigned). Determine the input voltage (may extend from the supply voltage range) where the BJT goes from “cut-off to active” and where it goes from “active to saturation”. Assume VCE=0.3V (edge of saturation), RL=500Ω, and C1, C2→∞.arrow_forward
- Please answer as soon as possible. I'll upvote it. Thanks. Consider a two-BJT configuration in Figure 1. You may assume that both transistors are the same with the same β, VBE,on = 0.7 V, and VCE,EOS = 0.3 V. Derive the DC current gain AI = IC/IB in terms of β for the two-transistor circuit. You may assume that β is large.arrow_forward1. Derive the Avf, Rif, Rof, R’of for the circuit shown in figure 1. For each transistor theh-parameters, hie and hfe are equal.arrow_forwardWhat are the values of IC1 and IC2 and the small-signal parameters for the current mirror as shown if IREF =100 μA, βFO =50, VA =50 V, VBE =0.7 V, VCE2 =10 V, and n=5?arrow_forward
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