Consider the circuit in Figure P11.8, with transistor parameters:
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Microelectronics: Circuit Analysis and Design
- Use a load-line analysis for the PMOS amplifier shown in Figure P11.24 to determine the maximum, minimum, and Q-point values of vo(t). The characteristics of the transistor are shown in Figure 11.9 on page 565.arrow_forwardIn the push-pull stage given (in the photo attached), IS1 = 5 × 10−17 A and IS2 = 8 × 10−17 A. Calculate the value of VB so as to establish a bias current of 5 mA in Q1 and Q2 (for Vout = 0). If the peak input swing is 2 V and RL = 8Ω : Calculate the small-signal voltage gain for Vout ≈ 0 Use the gain obtained in (i) to estimate the output voltage swing. Estimate the peak collector current of Q1 assuming that Q2 still carries 5 mAarrow_forwardAccording to the circuit given below, the values of the parameters specified in the options are detailed. Calculate by solving. (VCC= 12V, Rs = 4.7 K&,R1 = 27 K&,R2 = 5.6K&, RC = 2.2 KQ,RE - 470&, RL=1K&,B= 140) a) What is the current IE? b) What is the re resistance? C) What is the intrinsic gain of the transistor? d) What is the voltage gain of the circuit? e) What is the current gain of the circuit?arrow_forward
- Derive the Avf, Rif, Rof, R’of for the circuit shown in figure . For each transistor the h-parameters, hie and hfe are equal.arrow_forwardcan you help me with this homework problem? will thumbs up Find the overdrive voltage Vov of Q₁. What is the operating region of MOSFET Q₁? What is the drain current Id1 of Q₁? What is the resistance R₁? Find the R₂ value to be operating at the edge of the saturation region.arrow_forwardThe figure below shows the small-signal, equivalent-circuit model of a bipolar junction transistor (BJT). With rx = 180 Ω, rπ = 2.9 kΩ, rμ = 14 MΩ, ro = 140 kΩ, and gm = 80 mA/V. Calculate the values of its g-parameters.arrow_forward
- Topic: Input and Output Characteristics of Transistor in Common Base Configuration Answer in 2-3 sentences each. Need a kind tutor that will do it for me. Thank you! 1. Define "a" (alpha). 2. What is early effect? 3. What is the power gain of CB configuration?arrow_forwardThe given circuit is a 2N4403 PNP common collector amplifier. Let VCC=12V, VEE=-12V, R1=52.5kΩ, R2=33kΩ, and RE=2.5kΩ. Determine IB, IC, IE, VB, VC, and VE. Start by initially assuming |VBE| =0.7V or and assuming a value of beta (β). Where to look for the value of β? (Hint: It’s in the transistor model assigned). Determine the input voltage (may extend from the supply voltage range) where the BJT goes from “cut-off to active” and where it goes from “active to saturation”. Assume VCE=0.3V (edge of saturation), RL=500Ω, and C1, C2→∞.arrow_forwardIf RB=12KΩ, RC=150Ω, VBB=7V, VCC=18V determine the IB, IC, IE and collector – emitter voltage in the circuit given below. The transistor has a gain (β) =150. Assume forward voltage drop of the BE junction is 0.7 V (Fig Q2 (d))arrow_forward
- Using 741 op amp, design a suitable circuit to generate Binary Phase Shift Keyiing(BFSK) modulator. Design should perform in such a way that the BFSK output should contain a frequency of f1=2kHz when message signal is low and f2 =4kHz when the message signal is high. Take the frequency of message signal as 200Hz. Draw the clear circuit diagram and calculate the values of resistors and capacitors used.arrow_forwarddraw the complete circuit diagram of a transistor connected in CC mode with proper biasing along with its input-output characteristic.arrow_forwardTopic: Input and Output Characteristics of Transistor in Common Base Configuration Answer in 2-3 sentences each. Need a kind tutor that will do it for me. Thank you! 1. What are the applications of the common base (CB) configuration? 2. What are the output and input impedances of CB configuration?arrow_forward
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