Solutions for MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Problem 3.1EP:
An NMOS transistor with VTN=1V has a drain current iD=0.8mA when GS=3V and DS=4.5V Calculate the...Problem 3.2EP:
An PMOS device with VTP=1.2V has a drain current iD=0.5mA when GS=3V and SD=5V . Calculate the drain...Problem 3.1TYU:
(a) An nchannel enhancementmode MOSFET has a threshold voltage of VTN=1.2V and an applied...Problem 3.2TYU:
The NMOS devices described in Exercise TYU 3.1 have parameters W=20m , L=0.8m , to tox=200 ,...Problem 3.3TYU:
(a) A pchannel enhancementmode MOSFET has a threshold voltage of VTP=1.2V and an applied...Problem 3.4TYU:
The PMOS devices described in Exercise TYU 3.3 have parameters W=10m , L=0.8m , tox=200 ,...Problem 3.5TYU:
The parameters of an NMOS enhancementmode device are VTN=0.25V and Kn=10A/V2 . The device is biased...Problem 3.6TYU:
An NMOS transistor has parameters VTNO=0.4V , =0.15V1/2 , and f=0.345V . Calculate the threshold...Problem 3.4EP:
The transistor in Figure 3.26(a) has parameters VTP=0.6V and Kp=0.2mA/V2 . The circuit is biased at...Problem 3.5EP:
For the transistor in the circuit in Figure 3.28, the nominal parameter values are VTN=0.6V and...Problem 3.6EP:
Consider the circuit shown in Figure 3.30. The nominal transistor parameters are VTP=0.30V and...Problem 3.7EP:
Consider the circuit in Figure 3.30. Using the nominal transistor parameters described in Exercise...Problem 3.8EP:
(a) Consider the circuit shown in Figure 3.33. The transistor parameters are VTP=0.40V and Kp=30A/V2...Problem 3.9EP:
Consider the NMOS inverter shown in Figure 3.36 with transistor parameters described in Example 3.9....Problem 3.10EP:
Consider the circuit shown in Figure 3.39 with transistor parameters VTND=1V and VTNL=2V . (a)...Problem 3.11EP:
Consider the circuit in Figure 3.41. Assume the same transistor parameters and circuit parameters as...Problem 3.8TYU:
Consider the circuit in Figure 3.43. The transistor parameters are VTN=0.4V and kn=100A/V2 . Design...Problem 3.9TYU:
For the circuit shown in Figure 3.36, use the transistor parameters given in Example 3.9. (a)...Problem 3.10TYU:
Consider the circuit shown in Figure 3.44. The transistor parameters are VTN=1.2V and kn=80A/V2 ....Problem 3.11TYU:
For the circuit shown in Figure 3.39, use the transistor parameters given in Example 3.10. (a)...Problem 3.12EP:
For the MOS inverter circuit shown in Figure 3.45, assume the circuit values are VDD=5V and RD=500 ....Problem 3.13EP:
For the circuit in Figure 3.46, assume the circuit and transistor parameters are: RD=30k , VTN=1V ,...Problem 3.12TYU:
The circuit shown in Figure 3.45 is biased at VDD=10V , and the transistor parameter are VTN=0.7V...Problem 3.13TYU:
The transistor in the circuit shown in Figure 3.48 has parameters Kn=4mA/V2 and VTN=0.8V , and is...Problem 3.14TYU:
In the circuit in Figure 3.46, let RD=25k and VTN=1V . (a) Determine the value of the conduction...Problem 3.14EP:
For the circuit shown in Figure 3.49(a), assume circuit parameters of IREF=120A , V+=3V , and V=3V ;...Problem 3.16EP:
Consider the constantcurrent source shown in Figure 3.50. Assume that the threshold voltage of each...Problem 3.15TYU:
Consider the circuit in Figure 3.49(b). Assume circuit parameters of IREF2=40A , V+=2.5V , V=2.5V ,...Problem 3.16TYU:
Consider the circuit shown in Figure 3.50. Assume all transistor threshold voltages are 0.7 V....Problem 3.17EP:
The transistor parameters for the circuit shown in Figure 3.52 are the same as described in Example...Problem 3.18EP:
The transistor parameters for the circuit shown in Figure 3.53 are VTN1=VTN2=0.8V , Kn1=Kn2=0.5mA/V2...Problem 3.19EP:
The parameters of an nchannel JFET are IDSS=12mA , VP=4.5V , and =0 . Determine VDS(sat) for...Problem 3.20EP:
The transistor in the circuit in Figure 3.62 has parameters IDSS=6mA , VP=4V , and =0 . Design the...Problem 3.21EP:
For the pchannel transistor in the circuit in Figure 3.64, the parameters are: IDSS=6mA , VP=4V ,...Problem 3.22EP:
Consider the circuit shown in Figure 3.66 with transistor parameters IDSS=8mA , VP=4V , and =0 ....Problem 3.17TYU:
The nchannel enhancementmode MESFET in the circuit shown in Figure 3.67 has parameters Kn=50A/V2 and...Problem 3.18TYU:
For the inverter circuit shown in Figure 3.68, the nchannel enhancementmode MESFET parameters are...Problem 1RQ:
Describe the basic structure and operation of a MOSFET. Define enhancement mode and depletion mode.Problem 2RQ:
Sketch the general currentvoltage characteristics for both enhancementmode and depletionmode...Problem 3RQ:
Describe what is meant by threshold voltage, widthtolength ratio, and drainto source saturation...Problem 4RQ:
Describe the channel length modulation effect and define the parameter . Describe the body effect...Problem 5RQ:
Describe a simple commonsource MOSFET circuit with an nchannel enhancementmode device and discuss...Problem 7RQ:
In the dc analysis of some MOSFET circuits, quadratic equations in gate-to-source voltage are...Problem 9RQ:
Describe the currentvoltage relation of an nchannel enhancementmode MOSFET with the gate connected...Problem 10RQ:
Describe the currentvoltage relation of an nchannel depletionmode MOSFET with the gate connected to...Problem 13RQ:
Describe the basic operation of a junction FET.Problem 3.1P:
(a) Calculate the drain current in an NMOS transistor with parameters VTN=0.4V , kn=120A/V2 , W=10m...Problem 3.2P:
The current in an NMOS transistor is 0.5 mA when VGSVTN=0.6V and 1.0 mA when VGSVTN=1.0V . The...Problem 3.3P:
The transistor characteristics iD versus VDS for an NMOS device are shown in Figure P3.3. (a) Is...Problem 3.4P:
For an nchannel depletionmode MOSFET, the parameters are VTN=2.5V and Kn=1.1mA/V2 . (a) Determine ID...Problem 3.1CAE:
Verify the results of Example 3.4 with a PSpice analysis. As Example 3.4 illustrated, we may not...Problem 3.5P:
The threshold voltage of each transistor in Figure P3.5 is VTN=0.4V . Determine the region of...Problem 3.6P:
The threshold voltage of each transistor in Figure P3.6 is VTP=0.4V . Determine the region of...Problem 3.7P:
Consider an nchannel depletionmode MOSFET with parameters VTN=1.2V and kn=120A/V2 . The drain...Problem 3.8P:
Determine the value of the process conduction parameter kn for an NMOS transistor with n=600cm2/Vs...Problem 3.9P:
An nchannel enhancementmode MOSFET has parameters VTN=0.4V , W=20m , L=0.8m , tox=200 , and...Problem 3.3CAE:
Consider the NMOS circuit shown in Figure 3.36. Plot the voltage transfer characteristics, using a...Problem 3.10P:
An NMOS device has parameters VTN=0.8V , L=0.8m , and kn=120A/V2 . When the transistor is biased in...Problem 3.4CAE:
Consider the NMOS circuit shown in Figure 3.39. Plot the voltage transfer characteristics using a...Problem 3.11P:
A particular NMOS device has parameters VTN=0.6V , L=0.8m , tox=200 , and n=600cm2/Vs . A drain...Problem 3.12P:
MOS transistors with very short channels do not exhibit the square law voltage relation in...Problem 3.13P:
For a pchannel enhancementmode MOSFET, kp=50A/V2 . The device has drain currents of ID=0.225mA at...Problem 3.14P:
For a pchannel enhancementmode MOSFET, the parameters are KP=2mA/V2 and VTP=0.5V . The gate is at...Problem 3.15P:
The transistor characteristics iD versus SD for a PMOS device are shown in Figure P3.15. (a) Is this...Problem 3.16P:
A pchannel depletionmode MOSFET has parameters VTP=+2V , kp=40A/V2 , and W/L=6 . Determine VSD(sat)...Problem 3.17P:
Calculate the drain current in a PMOS transistor with parameters VTP=0.5V , kp=50A/V2 , W=12m ,...Problem 3.18P:
sDetermine the value of the process conduction parameter kp for a PMOS transistor with n=250cm2/Vs...Problem 3.19P:
Enhancementmode NMOS and PMOS devices both have parameters L=4m and tox=500 A . For the NMOS...Problem 3.20P:
For an NMOS enhancementmode transistor, the parameters are: VTN=1.2V , Kn=0.20mA/V2 , and =0.01V1 ....Problem 3.21P:
The parameters of an nchannel enhancementmode MOSFET are VTN=0.5V , kn=120A/V2 , and W/L=4 . What is...Problem 3.22P:
An enhancementmode NMOS transistor has parameters VTNO=0.8V , =0.8V1/2 , and f=0.35V . At what value...Problem 3.23P:
An NMOS transistor has parameters VTO=0.75V , kn=80A/V2 , W/L=15 , f=0.37V , and =0.6V1/2 . (a) The...Problem 3.24P:
(a) A silicon dioxide gate insulator of an MOS transistor has a thickness of tox=120 . (i) Calculate...Problem 3.25P:
In a power MOS transistor, the maximum applied gate voltage is 24 V. If a safety factor of three is...Problem 3.26P:
In the circuit in Figure P3.26, the transistor parameters are VTN=0.8V and Kn=0.5mA/V2 . Calculate...Problem 3.27P:
The transistor in the circuit in Figure P3.27 has parameters VTN=0.8V and Kn=0.25mA/V2 . Sketch the...Problem 3.29P:
The transistor in the circuit in Figure P3.29 has parameters VTP=0.8V and Kp=0.20mA/V2 . Sketch the...Problem 3.30P:
Consider the circuit in Figure P3.30. The transistor parameters are VTP=0.8V and Kp=0.5mA/V2 ....Problem 3.31P:
For the circuit in Figure P3.31, the transistor parameters are VTP=0.8V and Kp=200A/V2 Determine VS...Problem D3.32P:
Design a MOSFET circuit in the configuration shown in Figure P3.26. The transistor parameters are...Problem 3.33P:
Consider the circuit shown in Figure P3.33. The transistor parameters are VTN=0.4V and kn=120A/V2 ....Problem 3.34P:
The transistor parameters for the transistor in Figure P3.34 are VTN=0.4V , kn=120A/V2 , and W/L=50...Problem 3.35P:
For the transistor in the circuit in Figure P3.35, the parameters are VTN=0.4V , kn=120A/V2 , and...Problem D3.36P:
Design a MOSFET circuit with the configuration shown in Figure P3.30. The transistor parameters are...Problem 3.37P:
The parameters of the transistors in Figures P3.37 (a) and (b) are Kn=0.5mA/V2 , VTN=1.2V , and =0 ....Problem 3.38P:
For the circuit in Figure P3.38, the transistor parameters are VTN=0.6V and Kn=200A/V2 . Determine...Problem 3.41P:
Design the circuit in Figure P3.41 so that VSD=2.5V . The current in the bias resistors should be no...Problem 3.48P:
The transistors in the circuit in Figure 3.36 in the text have parameters VTN=0.6V , kp=120A/V2 ,...Problem 3.49P:
For the circuit in Figure 3.39 in the text, the transistor parameters are: VTND=0.6V , VTNL=1.2V ,...Problem 3.51P:
The transistor in the circuit in Figure P3.51 is used to turn the LED on and off. The transistor...Problem 3.53P:
For the twoinput NMOS NOR logic gate in Figure 3.46 in the text, the transistor parameters are...Problem 3.54P:
All transistors in the currentsource circuit shown in Figure 3.49(a) in the text have parameters...Problem 3.55P:
All transistors in the currentsource circuit shown in Figure 3.49(b) in the text have parameters...Problem 3.56P:
Consider the circuit shown in Figure 3.50 in the text. The threshold voltage and process conduction...Problem 3.57P:
The gate and source of an nchannel depletionmode WET are connected together. What value of VDS will...Problem 3.58P:
For an nchannel JFET, the parameters are IDSS=6mA and VP=3V . Calculate VDS(sat) . If VDSVDS(sat) ,...Problem 3.59P:
A pchannel JFET biased in the saturation region with VSD=5V has a drain current of ID=2.8mA at...Problem 3.62P:
The threshold voltage of a GaAs MESFET is VTN=0.24V . The maximum allowable gatetosource voltage is...Problem 3.66P:
For the circuit in Figure P3.66, the transistor parameters are IDSS=7mA and VP=3V . Let R1+R2=100k ....Problem 3.69P:
For the circuit in Figure P3.69, the transistor parameters are IDSS=4mA and VP=3V . Design RD such...Problem 3.76CSP:
Using a computer simulation, verify the results of Example 3.17 for the multitransistor circuit...Problem D3.77DP:
Consider the PMOS circuit shown in Figure 3.30. The circuit is to be redesigned such that IDQ=100A...Browse All Chapters of This Textbook
Chapter 1 - Semiconductor Materials And DiodesChapter 2 - Diode CircuitsChapter 3 - The Fields-effect TransistorChapter 4 - Basic Fet AmplifiersChapter 5 - Thebipolar Junction TransistorChapter 6 - Basic Bjt AmplifiersChapter 7 - Frequency ResponseChapter 8 - Output Stages And Power AmplifiersChapter 9 - Ideal Operational Amplifiers And Op-amp CircuitsChapter 10 - Integrated Circuit Biasinh And Active Loads
Chapter 11 - Differential And Multisatge AmplifiersChapter 12 - Feedback And StabilityChapter 13 - Operational Amplifier CircuitsChapter 14 - Nonideal Effects In Operational Amplifier CircuitsChapter 15 - Applications And Design Of Integrated CircuitsChapter 16 - Mosfet Digital CircuitsChapter 17 - Bipolar Digital Circuits
Sample Solutions for this Textbook
We offer sample solutions for MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL) homework problems. See examples below:
Chapter 1, Problem 1.1EPChapter 1, Problem 1.2EPChapter 1, Problem 1.1TYUChapter 1, Problem 1.7TYUChapter 1, Problem 1.3PChapter 1, Problem 1.17PChapter 1, Problem 1.27PChapter 1, Problem 1.30PChapter 1, Problem 1.35P
Given: The value of current is, IS1=IS2=10−13 A IS1=5×10−14 A, IS2=5×10−13A The given circuit is...Chapter 1, Problem 1.47PChapter 1, Problem 1.48PChapter 2, Problem 2.1EPChapter 2, Problem 2.1TYUChapter 2, Problem 2.3PChapter 2, Problem 2.24PChapter 2, Problem D2.25PChapter 2, Problem 2.45PChapter 2, Problem 2.47PChapter 2, Problem 2.51PChapter 2, Problem 2.52PChapter 2, Problem 2.57PChapter 2, Problem 2.59PChapter 2, Problem 2.62PChapter 3, Problem 3.1EPChapter 3, Problem 3.2TYUChapter 3, Problem 3.5EPChapter 3, Problem 3.8EPChapter 3, Problem 3.1PChapter 3, Problem 3.4PChapter 3, Problem 3.3CAEChapter 3, Problem 3.4CAEChapter 3, Problem 3.17PChapter 3, Problem 3.27PChapter 3, Problem 3.29PGiven Information: The given values are: VTN=1.4 V, Kn=0.25 mA/V2, IDQ=0.5 mA, VD=1 V The given...Given Information: The given circuit is shown below. VTN=0.4 V, kn'=120 μAV2( W L)1=( W L)2=30...Given Information: The given values are: VTN=0.6 V, kn'=120 μA/V2, IDQ=0.8 mA, V1=2.5 V, V2=6 V The...Given information: The given values are IDQ=0.8mAVTN=0.6Vkn'=100μA/V2=0.1mA/V2gm=1.8mA/V...Chapter 4, Problem 4.2EPChapter 4, Problem 4.3EPChapter 4, Problem 4.4EPChapter 4, Problem 4.8EPChapter 4, Problem 4.9EPChapter 4, Problem 4.12TYUChapter 4, Problem 4.40PChapter 4, Problem 4.66PChapter 4, Problem 4.67PChapter 4, Problem 4.70PChapter 4, Problem 4.71PChapter 4, Problem 4.78PChapter 5, Problem 5.1EPChapter 5, Problem 5.9EPChapter 5, Problem D5.31PChapter 5, Problem 5.32PChapter 5, Problem 5.42PChapter 5, Problem 5.52PGiven: The circuit is given as: Assume β=100 . Redrawing the given circuit by replacing voltage...Chapter 5, Problem 5.57PChapter 5, Problem 5.58PChapter 5, Problem D5.59PChapter 5, Problem D5.62PChapter 5, Problem 5.79PChapter 5, Problem 5.82PChapter 5, Problem D5.89DPChapter 5, Problem D5.91DPChapter 6, Problem 6.1EPGiven: Given circuit: Given Data: β=120VA=∞VBE(on)=0.7V Calculation: Considering the BJT (Bipolar...Given Information: The circuit diagram is shown below. β=120, VBE(on)=0.7 V, VA=∞VCC=VEE=3.3 V,...Chapter 6, Problem 6.16TYUChapter 6, Problem 6.19PChapter 6, Problem 6.26PChapter 6, Problem 6.45PChapter 6, Problem 6.51PChapter 6, Problem 6.52PChapter 6, Problem 6.54PChapter 6, Problem 6.83PChapter 7, Problem 7.1EPChapter 7, Problem 7.10EPChapter 7, Problem 7.21PChapter 7, Problem 7.23PChapter 7, Problem 7.32PChapter 7, Problem 7.40PChapter 7, Problem 7.41PChapter 7, Problem 7.49PChapter 7, Problem 7.50PChapter 7, Problem 7.69PChapter 7, Problem 7.70PCalculation: The expression for the collector to the emitter load line is given by, VCE=VCC−ICRC The...Calculation: The given diagram is shown in Figure 1 The conversion from 1 mA into A is given by, 1...Calculation: The sketch for the safe operating area of the transistor is shown below. The required...Calculation: The given diagram is shown in Figure 1 The expression for the maximum value of the...Calculation: The given diagram is shown in Figure 1 The conversion from 1 mA into A is given by, 1...Calculation: The given diagram is shown in Figure 1 The diagram for the class AB output stage using...Calculation: The given diagram is shown in Figure 1. The expression for the value of base current of...Chapter 8, Problem 8.48PChapter 8, Problem 8.49PChapter 9, Problem 9.1EPChapter 9, Problem 9.9EPChapter 9, Problem 9.6PChapter 9, Problem 9.13PChapter 9, Problem 9.14PChapter 9, Problem D9.18PChapter 9, Problem 9.51PChapter 9, Problem 9.62PChapter 9, Problem 9.63PChapter 9, Problem 9.65PChapter 9, Problem 9.67PChapter 9, Problem 9.72PChapter 9, Problem 9.81PChapter 10, Problem 10.1EPChapter 10, Problem 10.6TYUGiven: The circuit parameters are V+=+5VV−=0 The transistor parameters are...Chapter 10, Problem 10.56PGiven: VTN=0.4VVTP=−0.4VK'n=100μA/V2K'p=60μA/V2λn=λp=0 (W/L) 1 = (W/L) 2 =20 (W/L) 3 =5 (W/L) 4 =10...Chapter 10, Problem 10.63PGiven: VTN=0.5VVTP=−0.5V(1/2)μnCox=50μA/V2(1/2)μpCox=20μA/V2λn=λp=0 (W/L) 1 = (W/L) 3 = (W/L) 4 =5/1...Chapter 10, Problem 10.68PGiven: VTN=0.8VVTP=−0.8VK'n=100μA/V2K'P=60μA/V2λn=λp=0R=100kΩ Calculation: The given circuit is,...Chapter 10, Problem 10.76PGiven: R1=47kΩVAN=120VVAP=90VV+=3VVEB(on)=0.6V Calculation: The given circuit is, The transistor Q1...Chapter 10, Problem 10.83PChapter 10, Problem 10.89PChapter 10, Problem D10.90PChapter 11, Problem 11.1EPGiven: The given circuit is, V+=+5V ,V−=−5V,RD=1kΩ ,RS=2kΩ,VTP=−0.6V,Kp=1.2mA/V2,λ=0 v1=v2=0...Given: The given circuit is, V+=+5V ,V−=−5V,RD=25kΩ...Given: The given circuit is shown in Figure 1 Figure 1 Calculation: The expression for the current...Chapter 11, Problem 11.62PChapter 11, Problem 11.68PGiven: The given diagram is shown in Figure 1 Figure 1 Calculation: The expression for the input...Given: The given circuit is shown in Figure 1 Figure 1 Calculation: The expression for the input...Given: The given diagram is shown in Figure 1 Figure 1 Calculation: The expression to determine the...Chapter 11, Problem 11.82PGiven: The given circuit is, IQ=25μA,β=100 VA=50V,VTN=0.8V,Kn=0.25mA/V2,λ=0.02V−1 The two amplifying...Given: The circuit is given as: The circuit parameters:...Chapter 11, Problem 11.90PGiven: The given circuit is, β=200,VBE(on)=0.7V,VA=80V Calculation: Consider the given figure,...Chapter 11, Problem 11.93PChapter 11, Problem D11.105DPChapter 12, Problem 12.1EPGiven: The given diagram is shown in Figure 1 Figure 1 Calculation: Mark the nodes and redraw the...Given: The given diagram is shown in Figure 1 Figure 1 Feedback resistor value is varied between 5...Chapter 12, Problem 12.11TYUGiven: The give circuit is shown in Figure 1 Calculation: The value of the collector current of the...Chapter 12, Problem 12.37PChapter 12, Problem 12.38PGiven: The given values are: V+=5 VVGG=2.5 VRD1=5 kΩRE2=1.6 kΩRL=1.2 kΩKn=1.5(mAV2)VTN=0.5...Given: The given circuit is shown in Figure 1. Calculation: The Thevenin resistance of the above...Given: The given diagram is shown in Figure 1 Calculation: The expression to determine the value of...Chapter 12, Problem 12.49PChapter 12, Problem 12.50PChapter 12, Problem 12.53PGiven: The given circuit is shown in Figure 1 Figure 1 Calculation: The small signal equivalent...Chapter 12, Problem 12.77PChapter 12, Problem 12.80PGiven: The bias circuit and input stage portion of 741 op-amp circuit is shown below. Figure 1...Given: Following is given circuit of the MC14573 op-amp equivalent circuit Given data, The...Given: The circuit diagram of the BJT op-amp is Given that The transistor parameters are, β(npn)=120...Given: Circuit is given as; V+=3 V,V−=−3 V,R1=80 kΩ,RE=3.5 kΩ Current for transistors Q1,Q2 and Q3...Given: Consider the 741 op-amp having bias voltage ±5 V Calculation: The reference current is....Given: Consider the 741 op-amp having bias voltage ±5 V Calculation: The early voltage given as...Given: Consider the 741 op-amp having bias voltage ±5 V Calculation: The resistance at Q14 can be...Chapter 14, Problem 14.1TYUGiven: Given bipolar active load diff-amp is, Given parameters are: V+=5V V−=−5V The transistor...Chapter 14, Problem 14.38PGiven: Bipolar diff-amp with active load and a pair of offset-null terminal is shown below. Given...Given: The given circuit is: IB1=IB2=1 μA and vI=0 As vI=0 , the modified circuit is; For first...Given: The given circuit is: Input bias current IB=0.8 μA Input offset current IOS=0.2 μA R1=R2=50...Given: The given circuit is shown below. Input offset voltage is VOS=3 mV Average input bias current...Given: The given circuit is shown below. Input offset voltage V0S=2 mV at T=25°C Average input bias...Chapter 14, Problem 14.60PGiven: The given difference amplifier circuit is, Tolerance of each resistor is ±x% . Minimum CMRRdB...Chapter 15, Problem 15.1EPGiven: Circuit diagram for voltage regulator is shown below. The voltage of Zener diode Vz=5.6 V...Given: Calculation: Redraw the given circuit in s -domain as From the circuit,...Given: The circuit is given as: The circuit is redrawn by labeling the voltages as shown below:...Given: Consider the circuit shown below. Calculation: The non-inverting terminal of op-amp is...Given: The circuit is given for the phase shift oscillator: Redrawing the given circuit Nodal...Given: The circuit for the Hartley oscillator is given as: Transconductance, gm=30mA/VForward biased...Given: The circuit is given as: For the ideal operation amplifier, the inverting and non-inverting...Chapter 15, Problem 15.46PChapter 15, Problem 15.47PChapter 15, Problem 15.49PGiven: The circuit is given as: For the ideal operational amplifier, the currents in the inverting...Given: Given LM380 power amplifier circuit as V+=22Vβn=100βp=20 Calculation: Assuming matched input...Chapter 16, Problem 16.1EPGiven: Power supply voltage, VDD=3V Intrinsic trans conductance parameter, kn'=100×10−6A/V2 Device...Chapter 16, Problem 16.9EPGiven: The given circuit is shown below. The parameters are: VDD=3.3 VKn=50 μA/V2RD=100 kΩvI=3.3...Calculation: The given diagram is shown in Figure 1. The expression for the voltage VOH is given by,...Calculation: The given diagram is shown in Figure 1 The expression to determine the power dissipated...Calculation: The given diagram is shown in Figure 1 The expression to determine the...Calculation: The given diagram is shown in Figure 1 The expression to determine the...Calculation: The given diagram is shown in Figure 1. Consider the case when the input voltage is...Calculation: The expression to determine the value of the KN is given by, KN=k′n2(WL)n Substitute 80...Calculation: The expression to determine the value of the KN is given by, KN=k′n2(WL)n Substitute...Calculation: Consider the case when the input voltage is, vI=VDD The expression for the conduction...Calculation: The expression to determine the value of the KN is given by, KN=k′n2(WL)n Substitute...Calculation: The given diagram is shown in Figure 1 The given table is shown in Table 1 Table 1...Given: The given diagram is shown in Figure 1. Calculation: The expression to determine the...Calculation: The given diagram is shown in Figure 1 The expression to determine the analog output...Chapter 17, Problem 17.1EPCalculation: The given diagram is shown in Figure 1 The redesign circuit is shown below. The...Chapter 17, Problem 17.9EPCalculation: The given diagram is shown in Figure 1 Apply KVL in the above circuit. 5 V=iC(2.25...Calculation: The given diagram is shown in Figure 1 The expression to determine the value of the...Calculation: The given diagram is shown in Figure 1 Mark the currents and redraw the circuit. The...Calculation: The given diagram is shown in Figure 1. The expression for the current i1 is given by,...Calculation: The given diagram is shown in Figure 1 The expression for the voltage vB1 is given by,...
More Editions of This Book
Corresponding editions of this textbook are also available below:
Microelectronics: Circuit Analysis And Design
3rd Edition
ISBN: 9780071254434
Microelectronics Circuit Analysis and Design
4th Edition
ISBN: 9780071289474
MICROELECTRONICS CIRCUIT PACKAGE
4th Edition
ISBN: 9780078007972
Microelectronics Circuit Analysis and Design
4th Edition
ISBN: 9780077387815
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
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